參數(shù)資料
型號(hào)： DT28F016SA-100
廠商： INTEL CORP
元件分類(lèi)： DRAM
英文描述： 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
中文描述： 2M X 8 FLASH 12V PROM, 100 ns, PDSO56
封裝： 16 X 23.70 MM, 1.80 MM HEIGHT, SSOP-56
文件頁(yè)數(shù)： 36/63頁(yè)
文件大?。?/td> 635K
代理商： DT28F016SA-100
28F016SV FlashFile MEMORY
E
36
5.4 DC Characteristics
(Continued)
V
CC
= 5V
± 0.5V, 5V ± 0.25V, T
A
= 0°C to +70°C, –40°C to +85°C
3/5# = Pin Set Low for 5V Operations
Temp
Comm/Extended
Sym
Parameter
Notes
Min
Typ
Max
Units
Test Conditions
V
OL
Output Low Voltage
6
0.45
V
V
CC
= V
CC
Min
I
OL
= 5.8 mA
V
CC
= V
CC
Min
I
OH
= –2.5 mA
V
CC
= V
CC
Min
I
OH
= –100 μA
V
OH
1
Output High
Voltage
6
0.85
V
CC
V
CC
–
0.4
0.0
V
V
OH
2
6
V
PPLK
V
PP
Program/Erase
Lock Voltage
V
PP
during
Program/Erase
Operations
V
PP
during
Program/Erase
Operations
V
CC
Program/Erase
Lock Voltage
3,6
1.5
V
V
PPH1
4.5
5.0
5.5
V
V
PPH2
11.4
12.0
12.6
V
V
LKO
2.0
V
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
= 5V, V
= 12V or 5V
, T = 25°C. These currents are
valid for all product versions (package and speeds) and are specified for a CMOS rise/fall time (10% to 90%) of <5 ns and a
TTL rise/fall time of <10 ns.
2. I
CCES
is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
I
CCES
and I
CCR.
3. Block erases, word/byte programs and lock block operations are inhibited when V
PP
≤
V
PPLK
and not guaranteed in the
ranges between V
PPLK
(max)
and V
PPH1
(min), between V
PPH1
(max) and V
PPH2
(min) and above V
PPH2
(max).
4. Automatic Power Saving (APS) reduces I
CCR
to 1 mA typical in Static operation.
5. CMOS Inputs are either V
CC
± 0.2V or GND ± 0.2V. TTL Inputs are either V
IL
or V
IH
.
6. Sampled, not 100% tested. Guaranteed by design.
相關(guān)PDF資料
PDF描述
DT28F016SA-150 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DT28F160F3B120 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160F3B95 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160F3T120 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160F3T95 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DT28F016SA-150 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DT28F016SV-080 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
DT28F016SV-100 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
DT28F160 制造商:Intel 功能描述:
DT28F160F3B120 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
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