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參數(shù)資料
| 型號(hào)： | DSS25D-0045-T258 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DUAL SCHOTTKY BARRIER DIODE IN A HERMETIC TO258 PACKAGE |
| 中文描述： | 25 A, SILICON, RECTIFIER DIODE, TO-258AA |
| 封裝： | TO-258, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 12K |
| 代理商： | DSS25D-0045-T258 |
R
THj–case
*
Pulse Test:
Thermal Resistance Junction – Case
TBA
DSS25D-0045-T258
Prelim. 9/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
FRMS
I
FAV
I
FSM
I
AR
T
STG
T
J
P
TOT
RMS Forward Current (T
J
= T
VJM
)
Average Forward Current
Maximum Surge Forward Current t
p =
10ms, 50H
z
Reptetive Avalande Current V
A =
1.5 V
RRM
, f = 10KH
z
Storage Temperature
Junction Temperature
Total Power Dissipation
35A
25A
550A
1.8A
150
o
C
– 55 to +150
o
C
TBA.
MECHANICAL DATA
Dimensions in mm
1
2
3
17.65 (0.695)
17.39 (0.685)
4.19 (0.165)
3.94 (0.155)
Dia.
1
1
1
1
1
1
1.65 (0.065)
1.39 (0.055)
Typ.
5.08 (0.200)
BSC
3.56 (0.140)
BSC
2
2
1.14 (0.707)
0.88 (0.035)
6.86 (0.270)
6.09 (0.240)
DUAL SCHOTTKY
BARRIER DIODE IN A HERMETIC
TO258 PACKAGE
FEATURE
25A, 45V
Dual Common Cathode Configuration
Low VF
Low switching Losses
TO–258 METAL PACKAGE
Pin 1
–
Anode 1
Pin 2
–
Cathode
ABSOLUTE MAXIMUM RATINGS
(per diode))
DSS25D-0045-T258
Parameter
Test Conditions
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
V
R
= 45V
V
R
= 45V
Min.
Typ.
Max.
0.65
0.75
0.80
0.5
10
Unit
V
F
Forward Voltage
I
R
Reverse Current
I
F
= 25A
I
F
= 25A
I
F
= 50A
T
J
= 25
°
C
T
J
= 125
°
C
V
mA
Pin 3
–
Anode 2
ELECTRICAL CHARACTERISTICS
(Per Diode)
A1
A2
K
THERMAL DATA
Pulse Duration = 300
m
s , Duty Cycle
￡
2%
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|---|---|
| DSS25D25 | 制造商:CHENDA 制造商全稱:Chendahang Electronics Co., Ltd 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
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