
2002 IXYS All rights reserved
2 - 2
0.001
0.01
0.1
1
0
100
200
2
3
4
5 6 7 8 9
t
1
10
10
2
10
3
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
60
70
A
0
5
10
15
20
25
0
10
20
30
40
50
60
0
40
80
120
160
0.0001
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
K/W
I
2
t
I
FSM
I
F
V
F
t
s
P
tot
W
I
d(AV)M
A
T
amb
t
s
A
2
s
0
30
60
90
120 150 180
T
C
0
10
20
30
I
d(AV)M
A
V
A
°C
°C
T
VJ
= 150°C
T
VJ
= 25°C
50 Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 150°C
V
R
= 0 V
RthJA:
0.5 KW
1.8 KW
3 KW
5 KW
8 KW
15 KW
DSP25
ms
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current
Fig. 3 I
2
t
versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
0.06075
0.183
0.3405
0.543
0.3728
t
i
(s)
0.0004
0.00256
0.0045
0.0242
0.15
1
2
3
4
5
DSP 25