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參數(shù)資料
| 型號： | DSI75-12B |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier Diode Avalanche Diode |
| 中文描述： | 110 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 封裝： | DO-5, 1 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 41K |
| 代理商： | DSI75-12B |
2000 IXYS All rights reserved
2 - 2
DS
DSA 75
75
DSI
DSAI 75
75
2
3
4
5 6 7 ms
t
1
10
10
4
10
5
10
-3
10
-2
10
-1
10
0
0
500
1000
1500
0.0
0.5
1.0
1.5
0
50
100
150
200
0
50
100
150
20
0
50
100
150
P
F
200
50
100
150
200
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.0
0.5
1.0
1.5
I
2
t
I
FSM
I
F
A
V
t
s
W
I
F(AV)M
A
T
amb
°C
t
s
Z
thJH
K/W
A
2
s
0
40
80
120
160
200
0
50
100
150
200
I
F(AV)M
T
c
A
V
A
°C
Fig. 6 Transient thermal impedance junction to heatsink
R
thJH
for various conduction angles d:
d
R
thJH
(K/W)
0.900
1.028
1.085
1.272
1.476
DC
180
120
60
30
Constants for Z
thJH
calculation:
i
R
thi
(K/W)
0.0731
0.1234
0.4035
0.3000
t
i
(s)
0.0015
0.0237
0.4838
1.5
1
2
3
4
Fig. 1 Forward characteristics
Fig. 2 Surge overload current
I
FSM
: crest value, t: duration
Fig. 3 I
2
t
versus time (1-10 ms)
Fig. 4 Power dissipation versus forward current and ambient temperature
Fig. 5 Max. forward current at case
temperature
6
4
2
typ. lim.
T
VJ
= 180°C
T
VJ
= 25°C
T
VJ
= 180°C
T
VJ
= 45°C
50Hz, 80%V
RRM
T
VJ
= 45°C
T
VJ
= 180°C
V
R
= 0 V
DC
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
R
thJA
:
1 K/W
1.2 K/W
1.6 K/W
2 K/W
3 K/W
4 K/W
30°
60°
120°
180°
DC
ase
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