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參數(shù)資料
| 型號(hào)： | DSG9500-000 |
| 英文描述： | DSG9500-000:Planar Beam Lead PIN Diode|PIN Diodes: PIN Beam Lead Diodes |
| 中文描述： | DSG9500 - 000：平面梁式引線PIN二極管| PIN二極管：針梁式引線二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 62K |
| 代理商： | DSG9500-000 |
Skyworks Solutions, Inc. Phone [781] 376-3000 Fax [781] 376-3100 sales@skyworksinc.com www.skyworksinc.com
Skyworks Proprietary and Confidential information. Products and product information are subject to change without notice. Nov. 10, 2003
1
Characteristic
Value
Operating temperature
-65 °C to +150 °C
Storage temperature
-65 °C to +200 °C
Power dissipation (derate
linearly to zero @ 175 °C)
250 mW
Typical lead strength
8 grams pull
Absolute Maximum Ratings
Features
●
Low capacitance
●
Low resistance
●
Fast switching
●
Oxide-nitride passivated
●
Durable construction
●
High voltage
Description
The DSG9500-000 is designed for low resistance, low capaci-
tance and fast switching time.The oxide-nitride passivation
layers provide reliable operation and stable junction parameters
that provide complete sealing of the junction permitting use in
assemblies with some degree of moisture sealing.
The DSG9500-000 is ideal for microstrip or stripline circuits and
for circuits requiring high isolation from a series mounted diode
such as broad band multi-throw switches, phase shifters, lim-
iters, attenuators and modulators.
DSG9500-000: Planar Beam Lead PIN Diode
DATA SHEET
Breakdown
Voltage
@ 10
μ
A
(V)
Min.
200
Capacitance
Total @ 50 V,
1 MHz
(pF)
Max.
0.02
Series Resistance
(From Ins. Loss
@ 3 GHz, 50 mA)
(1)
(
)
Max.
4.0
Minority Carrier
Lifetime
I
F
= 10 mA,
I
R
= 6 mA (ns)
Typ.
250
RF Switching
Time
T
S
(ns)
(2)
Outline
Drawing
Number
Part
Number
DSG9500–000
25
169-001
Low Capacitance Planar Beam Lead Diode
Applications:
●
Designed for switching applications
1.Total capacitance calculated from isolation at 9 GHz zero bias. Series resistance and capacitance are measured at microwave frequencies on a sample basis from each lot.
All diodes are characterized for capacitance at –50 V, 1 MHz, and series resistance at 1 KHz, 50 mA, measurements which correlate well with microwave measurements.
2.T
S
measured from RF transition, 90% to 10%, in series configuration.
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