參數(shù)資料
型號(hào)： DSEP8-12A
廠商： IXYS CORP
元件分類(lèi)： 參考電壓二極管
英文描述： HiPerFREDTM Epitaxial Diode with soft recovery
中文描述： 10 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝： TO-220AC, 2 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 36K
代理商： DSEP8-12A
2000 IXYS All rights reserved
1 - 2
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
G
International standard package
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
Applications
G
Antiparallel diode for high frequency
switching devices
G
Antisaturation diode
G
Snubber diode
G
Free wheeling diode in converters
and motor control circuits
G
Rectifiers in switch mode power
supplies (SMPS)
G
Inductive heating
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
Avalanche voltage rated for reliable
operation
G
Soft reverse recovery for low
EMI/RFI
G
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
C
A
A = Anode, C = Cathode, TAB = Cathode
C
A
TO-220 AC
C (TAB)
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300 s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 8-12A
I
FAV
V
RRM
= 1200 V
t
rr
= 40 ns
= 10 A
V
RSM
V
V
RRM
V
Type
1200
1200
DSEP 8-12A
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
35
10
A
A
T
C
= 115°C; rectangular, d = 0.5
I
FSM
E
AS
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 8 A; L = 180 μH
V
A
= 1.25
·
V
R
typ.; f = 10 kHz; repetitive
40
A
6.9
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
0.8
A
-55...+175
°C
°C
°C
175
-55...+150
T
C
= 25°C
mounting torque
60
W
0.4...0.6
Nm
typical
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ
= 25°C
T
VJ
= 150°C V
R
= V
RRM
I
F
= 10 A;
V
R
= V
RRM
60
A
0.25
mA
V
F
y
T
VJ
= 150°C
T
VJ
= 25°C
1.96
2.94
V
V
R
thJC
R
thCH
t
rr
2.5
K/W
K/W
0.5
I
F
= 1 A; -di/dt = 50 A/ s;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 12 A; -di
F
/dt = 100 A/ s
T
VJ
= 100°C
40
ns
I
RM
4
A
相關(guān)PDF資料
PDF描述
DSEP9-06CR HiPerDynFRED Epitaxial Diode with soft recovery
DSEP HiPerFREDTM Epitaxial Diode with soft recovery
DSF10TL
DSF10T 1.0A Power Rectifier
DSF10TB 1.0A Power Rectifier
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