參數(shù)資料
型號(hào)： DSEP130-06A
廠商： IXYS CORP
元件分類： 參考電壓二極管
英文描述： HiPerFRED Epitaxial Diode with soft recovery
中文描述： 130 A, 600 V, SILICON, RECTIFIER DIODE, TO-247AD
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 17K
代理商： DSEP130-06A
2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
1 - 1
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
Advanced Technical Information
I
FAV
V
RRM
= 600 V
t
rr
= 35 ns
= 130 A
DSEP 130-06A
V
RSM
V
V
RRM
V
Type
600
600
DSEP130-06A
2
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see IXYS Databook 2001
A = Anode, C = Cathode, TAB = Cathode
TO-247 AD
C
A
C (TAB)
C
A
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
70
A
A
T
C
= 70°C; rectangular, d = 0.5
130
I
FSM
E
AS
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 1.8 A; L = 180 μH
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
1000
A
0.4
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
0.2
A
-55...+175
°C
°C
°C
175
-55...+150
T
C
= 25°C
mounting torque
375
W
0.8...1.2
Nm
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
①
T
VJ
= 25°C
T
VJ
= 150°C V
R
= V
RRM
I
F
= 130 A;
V
R
= V
RRM
1000
μA
mA
4
V
F
②
T
VJ
= 150°C
T
VJ
= 25°C
1.63
2.26
V
V
R
thJC
R
thCH
t
rr
0.4
K/W
K/W
0.25
I
F
= 1 A; -di/dt = 400 A/μs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 200 A; -di
F
/dt = 100 A/μs
T
VJ
= 100°C
35
ns
I
RM
8
10.2
A
Pulse test:
①
Pulse Width = 5 ms, Duty Cycle < 2.0 %
②
Pulse Width = 300 μs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
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DSEP1821 制造商:IXYS Corporation 功能描述:
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