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參數(shù)資料
| 型號(hào)： | DSEI36-06AS |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Fast Recovery Epitaxial Diode (FRED) |
| 中文描述： | 37 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 27K |
| 代理商： | DSEI36-06AS |
2000 IXYS All rights reserved
1 - 1
V
RSM
V
RRM
Type
V
V
600
600
DSEI 36-06AS
Symbol
Test Conditions
Maximum Ratings
I
FRMS
I
FAVM
x
I
FRM
T
VJ
= T
T
C
= 85 C; rectangular, d = 0.5
t
P
< 10 s; rep. rating, pulse width limited by T
VJM
70
37
375
A
A
A
I
FSM
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
300
320
A
A
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
260
280
A
A
I
2
t
T
VJ
= 45 C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
450
420
A
2
s
A
2
s
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
340
320
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
-40...+150
C
C
C
150
-40...+150
P
tot
T
C
= 25 C
125
W
Weight
2
g
Symbol
Test Conditions
Characteristic Values
max.
typ.
I
R
T
VJ
= 25 C
T
VJ
= 25 C
T
VJ
= 125 C
V
R
= V
V
R
= 0.8 V
RRM
V
R
= 0.8 V
RRM
100
50
A
A
7
mA
V
F
I
F
= 37 A;
T
VJ
=150 C
T
VJ
= 25 C
1.4
1.6
V
V
V
T0
r
T
For power-loss calculations only
T
VJ
= T
VJM
1.01
7.1
V
m
R
thJC
1.0
K/W
t
rr
I
F
= 1 A; -di/dt = 100 A/ s; V
R
= 30 V; T
VJ
= 25 C
35
50
ns
I
RM
V
= 350 V;
L 0.05 H; T
VJ
= 100 C
I
F
= 30 A; -di
F
/dt = 240 A/ s
10
11
A
Characteristic curves are located in the data sheet DSEI 30-06A.
x
I
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DSEI 36
V
RRM
= 600 V
I
FAVM
= 37 A
t
rr
= 35 ns
Dim.
Millimeter
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
Inches
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
TO-263 AA Outline
Features
G
International standard surface mount
package JEDEC TO-263 AA
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
Fast Recovery
Epitaxial Diode (FRED)
A
C
TO-263 AA
A
=
Anode,
C
=
Cathode,
NC = No connection, TAB = Cathode
NC
A
C (TAB)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DSEI60-02A | Fast Recovery Epitaxial Diode (FRED) |
| DSEI60-12A | Fast Recovery Epitaxial Diode (FRED) |
| DSEI60 | Fast Recovery Epitaxial Diode (FRED) |
| DSEI60-10A | Fast Recovery Epitaxial Diode (FRED) |
| DSEI60-06A | Fast Recovery Epitaxial Diode (FRED) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DSEI36-06ASTRL | 制造商:IXYS Corporation 功能描述:DSEI Series 600 Vrrm 37 A 1.6 Vf Fast Recovery Epitaxial Diode - TO-263AB |
| DSEI36-06AS-TUB | 制造商:IXYS Corporation 功能描述:DIODE FAST REC 600V 37A TO263AB |
| DSEI36-06AS-TUBE | 功能描述:整流器 36 Amps 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| DSEI60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Fast Recovery Epitaxial Diode (FRED) |
| DSEI60-02A | 功能描述:整流器 60 Amps 200V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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