參數(shù)資料
型號: DSEI19
廠商: IXYS Corporation
英文描述: Fast Recovery Epitaxial Diode (FRED)(正向電流20A的快速恢復(fù)外延型二極管)
中文描述: 快速恢復(fù)外延二極管(弗雷德)(正向電流20A條的快速恢復(fù)外延型二極管)
文件頁數(shù): 1/1頁
文件大?。?/td> 27K
代理商: DSEI19
2000 IXYS All rights reserved
1 - 1
x
I
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
V
RSM
V
RRM
Type
V
V
600
600
DSEI 19-06AS
Symbol
Test Conditions
Maximum Ratings
I
FRMS
I
FAVM
x
I
FRM
T
VJ
= T
T
C
= 65 C; rectangular, d = 0.5
t
P
< 10 s; rep. rating, pulse width limited by T
VJM
25
20
150
A
A
A
I
FSM
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
100
110
A
A
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
85
95
A
A
I
2
t
T
VJ
= 45 C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50
50
A
2
s
A
2
s
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
36
37
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
-40...+150
C
C
C
150
-40...+150
P
tot
T
C
= 25 C
61
W
Weight
2
g
Symbol
Test Conditions
Characteristic Values
max.
typ.
I
R
T
VJ
= 25 C
T
VJ
= 25 C
T
VJ
= 125 C
V
R
= V
V
R
= 0.8 V
RRM
V
R
= 0.8 V
RRM
50
25
A
A
3
mA
V
F
I
F
= 16 A;
T
VJ
=150 C
T
VJ
= 25 C
1.5
1.7
V
V
V
T0
r
T
For power-loss calculations only
T
VJ
= T
VJM
1.12
23.2
V
m
R
thJC
2
K/W
t
rr
I
F
= 1 A; -di/dt = 50 A/ s; V
R
= 30 V; T
VJ
= 25 C
35
50
ns
I
RM
V
= 350 V;
L 0.05 H; T
VJ
= 100 C
I
F
= 12 A; -di
F
/dt = 100 A/ s
4
4.4
A
Characteristic curves are located in the data sheet DSEI 12-06
DSEI 19
V
RRM
= 600 V
I
FAVM
= 20 A
t
rr
= 35 ns
Dim.
Millimeter
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
Inches
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
TO-263 AA Outline
Features
G
International standard surface mount
package JEDEC TO-263 AA
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
Fast Recovery
Epitaxial Diode (FRED)
A
C
TO-263 AA
A
=
Anode,
C
=
Cathode,
NC = No connection, TAB = Cathode
NC
A
C (TAB)
相關(guān)PDF資料
PDF描述
DSEI19-06 Fast Recovery Epitaxial Diode (FRED)
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