參數(shù)資料
型號: DSEC16-06A
廠商: IXYS CORP
元件分類: 參考電壓二極管
英文描述: HiPerFREDTM Epitaxial Diode with common cathode and soft recovery
中文描述: 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 37K
代理商: DSEC16-06A
2000 IXYS All rights reserved
1 - 2
Features
G
International standard package
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
Applications
G
Antiparallel diode for high frequency
switching devices
G
Antisaturation diode
G
Snubber diode
G
Free wheeling diode in converters
and motor control circuits
G
Rectifiers in switch mode power
supplies (SMPS)
G
Inductive heating
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
Avalanche voltage rated for reliable
operation
G
Soft reverse recovery for low
EMI/RFI
G
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
TO-220 AB
CA
A
A C A
A = Anode, C = Cathode, TAB = Cathode
C (TAB)
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300 s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
DSEC 16-06A
I
FAV
V
RRM
= 600 V
t
rr
= 35 ns
= 2x 10 A
V
RSM
V
V
RRM
V
Type
600
600
DSEC 16-06A
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
35
10
A
A
T
C
= 135°C; rectangular, d = 0.5
I
FSM
E
AS
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 0.9 A; L = 180 μH
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
50
A
0.1
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
0.1
A
-55...+175
°C
°C
°C
175
-55...+150
T
C
= 25°C
mounting torque
60
W
0.4...0.6
Nm
typical
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ
= 25°C
T
VJ
= 150°C V
R
= V
RRM
I
F
= 10 A;
V
R
= V
RRM
60
A
0.25
mA
V
F
y
T
VJ
= 150°C
T
VJ
= 25°C
1.42
2.10
V
V
R
thJC
R
thCH
t
rr
2.5
K/W
K/W
0.5
I
F
= 1 A; -di/dt = 50 A/ s;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 12 A; -di
F
/dt = 100 A/ s
T
VJ
= 100°C
35
ns
I
RM
4.4
A
相關(guān)PDF資料
PDF描述
DSEC16-12 HiPerFREDTM Epitaxial Diode with common cathode and soft recovery
DSEC16-12A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery
DSEC240-06A HiPerFREDTM Epitaxial Diode with soft recovery
DSEC29-02A HiPerFRED Epitaxial Diode with common cathode and soft recovery
DSEC29-02AS HiPerFRED Epitaxial Diode with common cathode and soft recovery
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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DSEC16-06BC 制造商:IXYS Corporation 功能描述:DIODE FAST 2X10A ISOPLUS220
DSEC16-12 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFREDTM Epitaxial Diode with common cathode and soft recovery
DSEC16-12A 功能描述:整流器 16 Amps 1200V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
DSEC16-12AS 功能描述:二極管 - 通用,功率,開關(guān) Fast Recovery Diodes RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube