參數(shù)資料
型號(hào): DS89C440-ENL
廠商: Maxim Integrated Products
文件頁(yè)數(shù): 16/46頁(yè)
文件大?。?/td> 0K
描述: IC MCU FLASH 32KB 33MHZ 44-TQFP
標(biāo)準(zhǔn)包裝: 160
系列: 89C
核心處理器: 8051
芯體尺寸: 8-位
速度: 33MHz
連通性: EBI/EMI,SIO,UART/USART
外圍設(shè)備: 電源故障復(fù)位,WDT
輸入/輸出數(shù): 32
程序存儲(chǔ)器容量: 32KB(32K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 1K x 8
電壓 - 電源 (Vcc/Vdd): 4.5 V ~ 5.5 V
振蕩器型: 外部
工作溫度: -40°C ~ 85°C
封裝/外殼: 44-TQFP
包裝: 托盤
DS89C430/DS89C450 Ultra-High-Speed Flash Microcontrollers
23 of 46
The signature bytes can be read in ROM loader mode or in parallel programming mode. Reading data from
addresses 30h, 31h, and 60h provides signature information on manufacturer, part, and extension as follows:
ADDRESS
VALUE
MEANING
30h
DAh
Manufacturer ID
31h
43h
DS89C430 Device ID
31h
44h
DS89C440 Device ID (Contact factory or replace with DS89C430 or DS89C450.)
31h
45h
DS89C450 Device ID
60h
01h
Device Extension
Note: The read/write accessibility of the flash memory during in-application programming is not affected by the state of the lock
bits. However, the lock bits do affect the read/write accessibility in ROM loader and parallel programming modes.
In-Application Programming by User Software
The DS89C430 supports in-application programming of on-chip flash memory by user software. In-application
programming is initiated by writing a flash command into the flash control (FCNTL:D5h) register to enable the flash
memory for erase/program/verify operations. Address and data are input into the MMU through the flash data
(FDATA:D6h) register. The flash command also enables read/write accesses to the FDATA. The MMU’s sequencer
provides the operation sequences and control functions to the flash memory. The MMU is designed to operate
independently from the processor, except for read/write access to the SFRs.
Only the upper bank of the on-chip program memory can be in-application programmed by the user software. The
lower bank of the on-chip program memory contains system hardware-dependent codes that are crucial to system
operation and should not be altered during in-application programming.
All flash operations are self-timed. The user software can monitor the progress of an erase or programming
operation through the flash busy (FBUSY;FCNTL.7) bit with a reset value at logic 1. A selected operation
automatically starts when required data is written to the FDATA SFR. The MMU clears the FBUSY bit to indicate
the start of a write/erase operation. The FBUSY bit may not change state for up to 1s after the operation is
requested. During this time, the application should poll the status of the FBUSY bit waiting for it to change state.
This bit is held low until either the end of the operation or until an error indicator is returned. A flash operating
failure terminates the current operation and sets the flash error flag (FERR;FCNTL.6) to logic 1. Both the busy and
error flags are read-only bits.
Read/write access during in-application programming is not affected by the state of the lock bits.
A sample programming sequence for a "write upper program memory bank" is shown below. The command must be
reentered each time an operation is requested, i.e., it is not permissible to issue the “write upper program memory
bank” command once and then repeatedly load address and data values to program a block of memory.
1. Make sure the FBUSY bit is 1 to indicate flash MMU is idle.
2. Write 0Bh to the FCNTL register using the timed access sequence.
3. Write address_MSB to the FDATA register.
4. Write address_LSB to the FDATA register.
5. Write data_value to the FDATA register.
6. Make sure the FBUSY bit is 0 to indicate programming has started.
7. Wait for FBUSY bit to return to 1 to indicate end of programming operation.
8. Make sure FERR is 0 to indicate no programming error.
The flash command (FC3–FC0;FCNTL.3:0) bits provide flash commands as listed in Table 4.
相關(guān)PDF資料
PDF描述
DS89C440-ENG IC MCU FLASH 32KB 25MHZ 44-TQFP
MC9S08GT60ACBE IC MCU 60K FLASH 4K RAM 42-SDIP
DS89C430-ENL IC MCU FLASH 16KB 33MHZ 44-TQFP
MCF52221CAF66 IC MCU 128K FLASH 66MHZ 100-LQFP
DS80C320-ECG/T&R IC MCU HI SPEED 25MHZ 44-TQFP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS89C440-ENL+ 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
DS89C440-MNG 功能描述:IC MCU FLASH 32KB 25MHZ 40-DIP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:89C 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:260 系列:73S12xx 核心處理器:80515 芯體尺寸:8-位 速度:24MHz 連通性:I²C,智能卡,UART/USART,USB 外圍設(shè)備:LED,POR,WDT 輸入/輸出數(shù):9 程序存儲(chǔ)器容量:64KB(64K x 8) 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:2K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-VFQFN 裸露焊盤 包裝:管件
DS89C440-MNL 功能描述:IC MCU FLASH 32KB 33MHZ 40-DIP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:89C 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:260 系列:73S12xx 核心處理器:80515 芯體尺寸:8-位 速度:24MHz 連通性:I²C,智能卡,UART/USART,USB 外圍設(shè)備:LED,POR,WDT 輸入/輸出數(shù):9 程序存儲(chǔ)器容量:64KB(64K x 8) 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:2K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-VFQFN 裸露焊盤 包裝:管件
DS89C440-MNL+ 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述:
DS89C440-QNG 功能描述:IC MCU FLASH 32KB 25MHZ 44-PLCC RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:89C 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:260 系列:73S12xx 核心處理器:80515 芯體尺寸:8-位 速度:24MHz 連通性:I²C,智能卡,UART/USART,USB 外圍設(shè)備:LED,POR,WDT 輸入/輸出數(shù):9 程序存儲(chǔ)器容量:64KB(64K x 8) 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:2K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-VFQFN 裸露焊盤 包裝:管件