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參數(shù)資料
| 型號： | DS4301U-200+T&R |
| 廠商： | Maxim Integrated Products |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 0K |
| 描述： | IC POT DIG NV 200K 32POS 8-USOP |
| 產(chǎn)品培訓(xùn)模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標(biāo)準(zhǔn)包裝： | 3,000 |
| 接片： | 32 |
| 電阻（歐姆）： | 200k |
| 電路數(shù)： | 1 |
| 溫度系數(shù)： | 標(biāo)準(zhǔn)值 ±250 ppm/°C |
| 存儲器類型： | 非易失 |
| 接口： | 3 線（芯片選擇，遞增，增/減） |
| 電源電壓： | 2.4 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-TSSOP，8-MSOP（0.118"，3.00mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-uMAX |
| 包裝： | 帶卷 (TR) |
DS4301
Nonvolatile, 32-Position Digital Potentiometer
_____________________________________________________________________
3
Note 1:
All voltages are referenced to ground.
Note 2:
STBY specified for VCC equal to 3.0V and 5.0V while control port logic pins are driven to VCC or GND.
Note 3:
Absolute linearity is used to determine wiper voltage versus expected voltage as determined by wiper position.
Note 4:
Relative linearity is used to determine the change of wiper voltage between two adjacent wiper positions.
Note 5:
The INC low to CS inactive time is the transition time that allows the three control pins to become inactive without writing
the wiper position to the EEPROM.
Note 6:
Wiper storage time is the time required for the wiper position to be written to the EEPROM. During this time, the three-ter-
minal interface is inactive.
Note 7:
Wiper load time is specified as the time required to load the wiper position stored in EEPROM once VCC has reached a
stable operating voltage greater than or equal to VCC MIN.
Note 8:
Power-up time is specified as the time required before the three control pins become active once a stable power supply
level of at least VCC MIN has been reached.
Note 9:
The maximum number of EEPROM write cycles is guaranteed by design and is not tested in production.
AC ELECTRICAL CHARACTERISTICCS
(VCC = VCC MIN to VCC MAX; TA = -40°C to +85°C. See Figure 2 for timing diagram.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
CS to INC Setup
tCI
50
ns
U/D to INC Setup
tDI
100
ns
INC Low Period
tIL
50
ns
INC High Period
tIH
100
ns
INC Inactive to CS Inactive
tIC
500
ns
CS Deselect Time
tCPH
100
ns
Wiper Change to INC Low
tIW
200
ns
INC Rise and Fall Times
tR, tF
5s
INC Low to CS Inactive
tIK
(Note 5)
50
ns
Wiper Storage Time
tWST
(Note 6)
10
ms
CS Low Pulse
tCLP
100
ns
Wiper Load Time
tWLT
(Note 7)
500
s
Power-Up Time
tPU
(Note 8)
2
ms
NONVOLATILE MEMORY CHARACTERISTICS
(VCC = VCC MIN to VCC MAX)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
EEPROM Write Cycles
+70°C (Note 9)
50,000
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