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參數(shù)資料
| 型號： | DS3800 |
| 英文描述： | Advanced NV SRAM Battery Cap |
| 中文描述： | 高級NV SRAM電池嵌蓋 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 26K |
| 代理商： | DS3800 |
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032800
FEATURES
Houses 400 mAh primary lithium battery
Snaps directly onto a surface–mounted 40mm
ball–grid array (BGA) Nonvolatile SRAM
module
Attaches after host BGA module has been
surface–mounted to protect lithium battery
from the high temperatures of reflow
soldering
Maintains mechanical and electrical
connection with BGA module even during
severe shock and vibration stresses
Four attachment flanges latch onto host BGA
module to provide strong, semi–permanent
attachment. Flanges can be broken off for cap
removal
Industrial temperature range of –40
°
C to
+85
°
C
attery Cap
PIN ASSIGNMENT
ABSOLUTE MAXIMUM RATINGS
Operating Temperature
Non-Operating Temperature
-40
°
C to 85
°
C
-40
°
C to 85
°
C
BATTERY CHARACTERISTICS
Nominal Voltage
Nominal Capacity
Chemistry
Data Retention Life
3 volts
400 mAh
Li(CF)x
8 Years (25
°
C)
DESCRIPTION
The DS3800 Battery Cap is a snap–on lithium power source for Dallas Semiconductors 40mm ball–grid
array (BGA) Nonvolatile SRAM modules. After a host BGA module has been soldered in place and
cleaned, the DS3800 Battery Cap is snapped onto the module to serve as the secondary power supply.
The Battery Cap is keyed to prevent incorrect attachment and is designed to maintain mechanical and
electrical contact with its host module even during severe shock and vibration. Electrically, the DS3800
battery is connected to the host BGA module with gold–plated round pins in the Battery Cap inserted into
gold–plated receptacles on the BGA. Mechanically, four flanges on the DS3800 tightly grip the BGA
module board to prevent Cap removal, while corner features in the Cap prevent lateral movement of the
Cap while it is attached to its host BGA module.
DS3800
Advanced NV SRAM Battery Cap
PRELIMINARY
www.dalsemi.com
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相關PDF資料 |
PDF描述 |
|---|---|
| DS3832C-311 | 3.3V, 32Mb Advanced NV SRAM with Clock |
| DS3884 | Pythagoras Processor |
| DS4000 | RECT BRIDGE 15A 1000V WIRE LEADS |
| DS4000N | RECT BRIDGE 15A 100V WIRE LEADS |
| DS4025 | RECT BRIDGE 15A 200V WIRE LEADS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS3802 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Advanced NV SRAM Battery |
| DS3803 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:1024k Flexible NV SRAM SIMM |
| DS3803-70 | 功能描述:IC NVSRAM 1MBIT 70NS 72SIMM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
| DS3816C-512 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mb Advanced NV SRAM with Clock |
| DS382 | 制造商:Miyama Electric 功能描述: |
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