參數(shù)資料
型號: DS35
廠商: IXYS Corporation
英文描述: Rectifier Diode Avalanche Diode
中文描述: 雪崩二極管整流二極管
文件頁數(shù): 2/2頁
文件大?。?/td> 40K
代理商: DS35
2000 IXYS All rights reserved
2 - 2
2
3
4
5 6 7 ms
t
1
10
2000
4000
6000
8A
2
s
1000
10000
10
-3
10
-2
10
-1
10
0
0
100
200
300
400
500
600
700
800
900
A
1000
0.5
1.0
1.5
2.0
0
50
100
150
200
250
0
20
40
60
80
0
20
40
60
80
100
0
0
50
100
150
200
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.0
0.4
0.8
1.2
1.6
2.0
I
2
t
I
FSM
I
F
A
V
t
s
P
F
W
I
F(AV)M
A
T
amb
°C
t
s
Z
thJH
K/W
0
40
80
120
160
200
0
10
20
30
40
50
60
I
F(AV)M
T
c
A
V
°C
R
thJH
for various conduction angles d:
d
R
thJH
(K/W)
1.25
1.37
1.47
1.74
2.08
DC
180
120
60
30
Constants for Z
thJH
calculation:
i
R
thi
(K/W)
0.10
0.25
0.70
0.20
t
i
(s)
0.0012
0.1181
0.6540
2.0
1
2
3
4
DS
DSA 35
35
DSI
DSAI 35
35
Fig. 6 Transient thermal impedance junction to heatsink
Fig. 1 Forward characteristics
Fig. 2 Surge overload current
I
FSM
: crest value, t: duration
Fig. 3 I
2
t
versus time (1-10 ms)
Fig. 4 Power dissipation versus forward current and ambient temperature
Fig. 5 Max. forward current at case
temperature 180° sine
T
VJ
= 180°C
T
VJ
= 180°C
T
VJ
= 45°C
V
R
= 0 V
50Hz, 80% V
RRM
DC
180° sin
120°
60°
30°
typ. lim.
T
VJ
= 180°C
T
VJ
= 25°C
T
VJ
= 45°C
R
thJA
:
1.5 K/W
1.9 K/W
2.3 K/W
3.9 K/W
ase
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