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參數(shù)資料
| 型號： | DS2435 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Memory IC:Other |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBCY3 |
| 封裝： | PR-35, 3 PIN |
| 文件頁數(shù)： | 19/24頁 |
| 文件大?。?/td> | 1190K |
| 代理商： | DS2435 |
DS2435
4 of 24
MEMORY
The DS2435’s memory is divided into five pages, each page filling 32 bytes of address space. Not all of
the available addresses are used, however. Refer to the memory map of Figure 4 to see actual addresses
which are available for use.
The first three pages of memory consist of a scratchpad RAM and then either a nonvolatile RAM (pages 1
and 2) or SRAM (page 3). The scratchpads help insure data integrity when communicating over the 1-
Wire bus. Data is first written to the scratchpad where it can be read back. After the data has been
verified, a copy scratchpad command will transfer the data to the RAM (NV or SRAM). This process
insures data integrity when modifying the memory.
The fourth page of memory consists of registers which contain the measured temperature value,
time/temperature histogram registers, elapsed time counter, and status registers for the device; these
registers are made from SRAM cells.
The fifth page of memory holds the ID number for the device, the cycle count registers and the histogram
bin limits in E2 RAM, making these registers nonvolatile under all power conditions.
PAGE 1
The first page of memory has 24 bytes. It consists of a scratchpad RAM and a nonvolatile (E2) RAM.
These 24 bytes may be used to store any data the user wishes; such as battery chemistry descriptors,
manufacturing lot codes, gas gauge information, etc.
The nonvolatile portion of this page may be locked to prevent data stored here from being changed
inadvertently. Both the nonvolatile and the scratchpad portions are organized identically, as shown in the
memory map of Figure 4. In this page, these two portions are referred to as NV1 and SP1, respectively.
PAGE 2
The second page of memory has 8 bytes. It consists of a scratchpad RAM and a nonvolatile (E2) RAM.
These 8 bytes may be used to store any data the user wishes, such as battery chemistry descriptors,
manufacturing lot codes, gas gauge information, etc.
PAGE 3
The third page of memory has a full 32 bytes. It consists of a scratchpad RAM and an SRAM. This
address space may be used to store any data the user wishes, such as gas gauge and self-discharge
information. Should the battery go dead and power to the DS2435 is lost, this data may also be lost. Data
which must remain even if power to the DS2435 is lost should be placed in either Page 1 or Page 2.
PAGE 4
The fourth page of memory is used by the DS2435 to store the converted value of battery temperature, the
time/temperature histogram data, and the elapsed time counter. A 2-byte status register is also provided.
TEMPERATURE REGISTERS (60h-61h)
The DS2435 can measure temperature without external components. The resulting temperature
measurement is placed into two temperature registers. These registers are SRAM, and therefore will hold
the values placed in them until the battery voltage falls below the minimum VDD specified. The first
register, at address 60h, provides °C resolution for temperatures between 0°C and 127 °C, formatted
as follows:
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS2436B | SPECIALTY MEMORY CIRCUIT, PBCY3 |
| DS2436Z | SPECIALTY MEMORY CIRCUIT, PDSO8 |
| DS2490S | UNIVERSAL SERIAL BUS CONTROLLER, PDSO24 |
| DS2502P | 128 X 8 OTPROM, PDSO6 |
| DS2502S | 128 X 8 OTPROM, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS2436 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Battery ID/Monitor Chip |
| DS2436_07 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Battery ID/Monitor Chip |
| DS2436B | 功能描述:電池管理 RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| DS2436B/R | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Battery ID/Monitor Chip |
| DS2436B/T | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Battery ID/Monitor Chip |
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