參數(shù)資料
型號(hào)： DS2406P
英文描述： Dual Addressable Switch Plus 1K-Bit Memory
中文描述： 雙址開關(guān)與1K位存儲(chǔ)器
文件頁(yè)數(shù)： 25/30頁(yè)
文件大?。?/td> 156K
代理商： DS2406P
DS2406
25 of 30
READ/WRITE TIMING DIAGRAM
(continued) Figure 15
Read-data Time Slot
RESISTOR
MASTER
DS2406
Master
Sampling Window
60 μs
≤
t
SLOT
< 120 μs
1 μs
≤
t
LOWR
< 15 μs
0
≤
t
RELEASE
< 45 μs
1 μs
≤
t
REC
<
∞
t
RDV
= 15 μs
t
SU
< 1 μs
V
PULLUP
V
PULLUP MIN
V
IH MIN
V
IL MAX
0V
t
SLOT
t
REC
t
LOWR
t
SU
t
RDV
t
RELEASE
*
The optimal sampling point for the master is as close as possible to the end time of the 15
μ
s t
RDV
period without exceeding t
RDV
. For the case of a Read-one time slot, this maximizes the amount
of time for the pull-up resistor to recover the line to a high level. For a Read-zero time slot it
ensures that a read will occur before the fastest 1-Wire devices(s) release the line (t
RELEASE
= 0).
PROGRAM PULSE
To copy data from the 8-bit scratchpad to the EPROM data or status memory, a program pulse is applied
to the data line after the bus master has confirmed that the CRC for the current byte is correct. During
programming, the bus master controls the transition from a state where the data line is idling high via the
pull-up resistor to a state where the data line is actively driven to a programming voltage of 12 volts
providing a minimum of 10 mA of current to the DS2406. This programming voltage (Figure 16) should
be applied for 480 μs, after which the bus master should return the data line to the idle high state. Note
that due to the high voltage programming requirements for any 1-Wire EPROM device, it is not possible
to multi-drop non-EPROM based 1-Wire devices with the DS2406 during programming. An internal
diode within the non-EPROM based 1-Wire devices will attempt to clamp the data line at approximately
8 volts and could potentially damage these devices.
相關(guān)PDF資料
PDF描述
DS2406T Dual Addressable Switch Plus 1K-Bit Memory
DS2406V Dual Addressable Switch Plus 1K-Bit Memory
DS2406X Dual Addressable Switch Plus 1K-Bit Memory
DS2407 Dual Addressable Switch Plus 1K.Bit Memory
DS2407P Dual Addressable Switch Plus 1K.Bit Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS2406P/R 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Dual Addressable Switch Plus 1kbit Memory
DS2406P/T 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Dual Addressable Switch Plus 1kbit Memory
DS2406P/T&R 制造商:Maxim Integrated Products 功能描述:IC SW DL ADDRESS W/1K MEM 6-TSOC
DS2406P/T&R 功能描述:接口 - 專用 RoHS:否 制造商:Texas Instruments 產(chǎn)品類型:1080p60 Image Sensor Receiver 工作電源電壓:1.8 V 電源電流:89 mA 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:BGA-59
DS2406P/TR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Peripheral IC
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