- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄93262 > DS2229 (DALLAS SEMICONDUCTOR) 512K X 16 MULTI DEVICE SRAM MODULE, 85 ns, SMA80 PDF資料下載
參數(shù)資料
| 型號： | DS2229 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 512K X 16 MULTI DEVICE SRAM MODULE, 85 ns, SMA80 |
| 封裝： | SIMM-80 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 374K |
| 代理商： | DS2229 |
DS2229
9 of 10
WRITE CYCLE 2 Figure 7
NOTES:
1. A write occurs during the overlap of a low CE0 - CE3 , a high CS, and a low WE . A write begins at the
latest transition among CE0 - CE3 going low, CS going high, and WE going low. A write ends at the
earliest transition among CE0 - CE3 going high, CS going low and WE going high. tWP is measured
from the beginning of write to the end of write.
2.
WE
is high for a read cycle.
3. tDS ends and tDH begins at the earliest transaction among CE0 - CE3 going high.
4. tWR is measured from the earliest of CE0 - CE3 WE going high or CS going low to the end of write
cycle.
5. CS controls address buffer, WE buffer, CE0 - CE3 buffer, OE buffer and DIN buffer. If CS controls
data retention mode, VIN levels (address, WE , OE , CE0 - CE3 , I/O) can be in the high impedance state.
If CE0 - CE3 controls data retention mode, CS must be CS
≥ V
CC - 0.2V or 0V < CS < 0.2V. The other
input levels (address, WE , OE , I/O) can be in the high impedance state.
6. If CE0 - CE3 goes low simultaneously with WE going low or after WE going low, the outputs remain
in a high impedance state.
7. If CE0 - CE3 is low and CS is high during this period, I/O pins are in the output state. Therefore, the
input signals of the opposite phase to the outputs must not be applied to them.
8. This parameter is sampled and not 100% tested.
9. Only one CE active during any read or write cycle.
相關PDF資料 |
PDF描述 |
|---|---|
| DS2251T | 8-BIT, MICROCONTROLLER, SMA72 |
| DS2290 | SPECIALTY TELECOM CIRCUIT, SMA30 |
| DS2291 | SPECIALTY TELECOM CIRCUIT, SMA30 |
| DS229EN | LINE TRANSCEIVER, PDSO20 |
| DS232A-N | LINE TRANSCEIVER, PDIP16 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS2229-100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM Module |
| DS2229-120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM Module |
| DS2229-85 | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS2229I-1MG | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS2229I-256 | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。