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參數(shù)資料
| 型號： | DS2227-120 |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | Static RAM |
| 英文描述： | 512K X 8 NON-VOLATILE SRAM MODULE, 120 ns, SMA72 |
| 封裝： | STIK, SIP-72 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 191K |
| 代理商： | DS2227-120 |
DS2227
9 of 10
NOTES:
1.
WE
is high for a read cycle.
2.
OE
= VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high impedance
state.
3.
tWP is specified as the logical AND of CE and WE .
4.
tDH, tDS are measured from the earlier of CE or WE going high.
5.
tDH is measured from WE going high. If CE is used to terminate the write cycle then tDH = 20 ns.
6.
If the CE low transition occurs simultaneously with or later than the WE low transition, the
output buffers remain in a high impedance state in this period.
7.
If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high impedance state in this period.
8.
If the WE is low or the WE low transition occurs prior to or simultaneously with the CE low
transition, the output buffers remain in a high impedance state in this period.
9.
Each DS2227 is marked with a 4-digit date code AABB. AA designates the year of manufacture.
BB designates the week of manufacture. The minimum expected tDR is defined as starting at the
date of manufacture.
10.
Timings are valid only when CE is tied low.
DC TEST CONDITIONS
Outputs Open
Cycle = 200 ns
All Voltages are Referenced to Ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL gate
Input Pulse Levels: 0 - 3.0 V
Timing Measurements Reference Levels:
Input - 1.5V
Output - 1.5V
Input Pulse Rise and Fall Times: 5 ns
ORDERING INFORMATION
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| DS2229 | 512K X 16 MULTI DEVICE SRAM MODULE, 85 ns, SMA80 |
| DS2251T | 8-BIT, MICROCONTROLLER, SMA72 |
| DS2290 | SPECIALTY TELECOM CIRCUIT, SMA30 |
| DS2291 | SPECIALTY TELECOM CIRCUIT, SMA30 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS2227-70 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Flexible NV SRAM Stik |
| DS2228-100 | 功能描述:靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS2229 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Word-Wide 8 Meg SRAM Stik |
| DS2229-100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM Module |
| DS2229-120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM Module |
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