參數(shù)資料
型號: DS1862AB+T&R
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 消費(fèi)家電
英文描述: SPECIALTY CONSUMER CIRCUIT, PBGA25
封裝: 5 X 5 MM, ROHS COMPLIANT, CSBGA-25
文件頁數(shù): 17/42頁
文件大?。?/td> 586K
代理商: DS1862AB+T&R
DS1862A
XFP Laser Control and Digital Diagnostic IC
24
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During an asserted period of P-DOWN/RST (DS1862A
in power-down), and VCC3 is cycled, the DS1862A
remains in power-down mode upon power-up. While in
power-down mode the INTERRUPT pin does not assert.
Once VCC3 has returned, the reset done flag asserts
after the interrupt assert delay, tINIT_ON.
Reset Functionality
Besides powering down the DS1862A, the P-
DOWN/RST pin also functions to reset the DS1862A.
After a high-going pulse of time tRESET, several events
occur within the DS1862A. First, MODSET and BIASSET
currents shut down and are then reinstated. Second,
between the rising edge of the reset pulse and the
assertion of the reset-done flag (tINIT), the low TX-P flag
is ignored and does not cause FETG to trip. After time
tINIT, the low TX-P flag becomes functional. Also, at this
time, the reset-done flag is asserted, causing an inter-
rupt to be generated. If there are no faults before tINIT,
then no interrupts are asserted on the INTERRUPT pin.
If VCC3 is powered up while P-DOWN/RST is high, then
the reset-done flag must be cleared twice. The first time
the reset-done flag is generated by VCC3 powering up,
the second time reset-done is generated by a falling
edge on P-DOWN/RST. If VCC3 is continuously pow-
ered while P-DOWN/RST is low then only one reset-
done flag needs to be cleared. See the timing
diagrams for graphical detail.
Memory Map
Memory Organization
The DS1862A features six separate memory tables that
are internally organized into 4-word rows. The Lower
Memory is addressed from 00h to 7Fh and contains
alarm and warning thresholds, flags, masks, several
control registers, password entry area (PE), and the
table select byte. Table 01h primarily contains user
EEPROM as well as several control bytes for various
functions. Table 02h is strictly user EEPROM that is pro-
tected by a host password. Table 03h is strictly used
for controlling the extinction ratio with an LUT. Table
04h is a multifunction space that contains internal cali-
bration values for monitored channels, LUT index point-
ers, and miscellaneous control bytes. Table 05h is
factory programmed and stores SCALE values for use
with suggested external temperature sensors. Also, one
byte in Table 05h controls the THRSET voltage source
and is completely accessible without any password
protection. See the
Detailed Register Description sec-
tion for a more complete detail of each byte’s function,
as well as Table 11 for read/write permissions for each
byte. Many nonvolatile memory locations are actually
SRAM-shadowed EEPROM, which are controlled by the
SEEB bit in Table 04h, Byte B2h.
The DS1862A incorporates SRAM-shadowed EEP-
ROM memory locations for key memory addresses
that may be rewritten many times. By default the shad-
owed-EEPROM bit, SEEB, is not set and these loca-
tions act as ordinary EEPROM. By setting SEEB, these
locations begin to function like SRAM cells, which allow
an infinite number of write cycles without concern of
wearing out the EEPROM. This also eliminates the
requirement for the EEPROM write time, tWR. Because
changes made with SEEB enabled do not affect the
EEPROM, these changes are not retained through
power cycles. The power-up value is the last value writ-
ten with SEEB disabled. This function can be used to
limit the number of EEPROM writes during calibration or
to change the monitor thresholds periodically during
normal operation helping to reduce the number of times
EEPROM is written. The following information describes
which locations are shadowed-EEPROM.
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