參數(shù)資料
型號: DS1855E-C01+T&R
廠商: Maxim Integrated Products
文件頁數(shù): 17/21頁
文件大?。?/td> 0K
描述: IC DUAL NV DGTL POT/MEM 14-TSSOP
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 1,000
接片: 100,256
電阻(歐姆): 10k
電路數(shù): 2
溫度系數(shù): 標(biāo)準(zhǔn)值 750 ppm/°C
存儲器類型: 非易失
接口: I²C(設(shè)備位址)
電源電壓: 2.7 V ~ 5.5 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 14-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 14-TSSOP
包裝: 帶卷 (TR)
DS1855
5 of 21
FBh – FCh
Lock Bytes
Writing to these two bytes allows the user to lock or unlock the
memory described in byte FAh.
LOCK: If memory location FBh is written to 56h and memory
location FCh is written to 25h, the device will enter lock mode.
Write protection will become active in the memory locations that
are specified in FAh.
UNLOCK: If memory location FBh is written to 67h and memory
location FCh is written to 36h, the device will be unlocked. Once
unlocked, the user can change the setting of memory location FAh
to affect the EEPROM write-protection.
The locking can be updated at any time as long as the upper
page is unlocked.
FD – FFh
Reserved
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