參數(shù)資料
型號(hào): DS1809
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 模擬信號(hào)調(diào)理
英文描述: Nonvolatile Digitally Controlled Potentiometer(非易失性數(shù)字電位器)
中文描述: SPECIALTY ANALOG CIRCUIT, PDIP8
封裝: DIP-8
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 46K
代理商: DS1809
DS1809
061798 3/5
EEPROM cell array of the DS1809 is designed to accept
greater than 50K writes.
Autostorage
The autostore configuration is designed to provide
wiper position storage as the part powers–down; writing
the current wiper position into memory. The configura-
tion for initiating the automatic storage capability of the
DS1809 is shown in Figure 3. As shown in this configu-
ration two external devices are required to insure proper
wiper storage. This includes a schottky diode and a
10 uf capacitor. The automatic store configuration will
cause the DS1809 to initiate a storage of wiper position
when power (V
CC
) to the device is removed. The
10 uF capacitor and schottky diode are used to provide
supplemental power for wiper storage.
Command–Initiated Wiper Storage
The DS1809 will also support a command–initiated
wiper storage operation during powered conditions. For
command initiated storage, the STR pin should be held
in a low state on power–up; otherwise the part will
assume an autostore configuration. As shown in Figure
5, a low–to–high pulse lasting at least 1
μ
s on the STR
input, will cause the DS1809 to initiate the storage of the
current wiper position into EEPROM when V
CC
is pres-
ent.
PUSH–BUTTON CONFIGURATION
Figure 2
DC 7
2 UC
GND 5
It is assumed that the the STR input will be controlled by
either external logic or CPU driven. No external capaci-
tors or diodes are needed for the command–initiated
storage operation.
The STR input will take precedence over the pushbut-
ton inputs UC and DC.
AUTOSTORE CONFIGURATION
Figure 3
V
CC
8
3 STR
10 uF
CAP.
SCHOTTKY DIODE
PUSH–BUTTON TIMING DIAGRAMS
Figure 4
CONTINUOUS AND SINGLE PULSE INPUTS
t
CCP
t
PW
REPETITIVE PULSE INPUTS
t
HPW
t
PW
If during any pushbutton activity, the STR input is acti-
vated pushbutton operation will be suspended until the
storage of EEPROM has been completed. Once com-
plete, pushbutton inputs if still active will resume from
the point of suspension. Command initiated storage
operations will require a minimum 4 ms to complete the
storage operation. This 4 ms is measured from the rise
of STR input (see Figure 5).
For applications not requiring or using the nonvolatile
memory feature of the DS1809, it is recommended that
the STR input be connected to GND.
COMMAND INITIATED WIPER STORAGE
Figure 5
t
STR
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DS1809-010+ 功能描述:數(shù)字電位計(jì) IC Dallastat RoHS:否 制造商:Maxim Integrated 電阻:200 Ohms 溫度系數(shù):35 PPM / C 容差:25 % POT 數(shù)量:Dual 每 POT 分接頭:256 弧刷存儲(chǔ)器:Volatile 緩沖刷: 數(shù)字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作電源電壓:1.7 V to 5.5 V 電源電流:27 uA 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TQFN-16 封裝:Reel
DS1809-050 功能描述:數(shù)字電位計(jì) IC RoHS:否 制造商:Maxim Integrated 電阻:200 Ohms 溫度系數(shù):35 PPM / C 容差:25 % POT 數(shù)量:Dual 每 POT 分接頭:256 弧刷存儲(chǔ)器:Volatile 緩沖刷: 數(shù)字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作電源電壓:1.7 V to 5.5 V 電源電流:27 uA 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TQFN-16 封裝:Reel
DS1809-050+ 功能描述:數(shù)字電位計(jì) IC Dallastat RoHS:否 制造商:Maxim Integrated 電阻:200 Ohms 溫度系數(shù):35 PPM / C 容差:25 % POT 數(shù)量:Dual 每 POT 分接頭:256 弧刷存儲(chǔ)器:Volatile 緩沖刷: 數(shù)字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作電源電壓:1.7 V to 5.5 V 電源電流:27 uA 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TQFN-16 封裝:Reel
DS1809-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Digital Potentiometer