DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs
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DC ELECTRICAL CHARACTERISTICS (3.3V)
(
VCC = 3.3V ±10%, TA = Over the Operating Range.)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Active Supply Current
ICC
10
30
mA
2, 3
TTL Standby Current (CE = VIH)
ICC1
0.7
2
mA
2, 3
CMOS Standby Current
(CE ≥ VCC - 0.2V;
CE2 = GND + 0.2V)
ICC2
0.7
2
mA
2, 3
Input Leakage Current
(Any Input)
IIL
-1
+1
A
Output Leakage Current
(Any Output)
IOL
-1
+1
A
Output Logic 1 Voltage
(IOUT = -1.0mA)
VOH
2.4
1
Output Logic 0 Voltage
(IOUT =2.1mA)
VOL1
0.4
1
Write-Protection Voltage
VPF
2.75
2.97
V
1
Battery Switchover Voltage
VSO
VBAT
or
VPF
V
1, 4
AC CHARACTERISTICS—READ CYCLE (5V)
(VCC = 5.0V ±10%, TA = Over the Operating Range.)
PARAMETER
SYMBOL
ACCESS
UNITS
NOTES
70ns
85ns
100ns
MIN
MAX MIN MAX MIN
MAX
Read Cycle Time
tRC
70
85
100
ns
Address Access Time
tAA
70
85
100
ns
CE
to CE2 to DQ Low-Z
tCEL
5
ns
5
CE
Access Time
tCEA
70
85
100
ns
5
CE2 Access Time
tCE2A
80
95
105
ns
5
CE
and CE2 Data-Off
Time
tCEZ
25
30
35
ns
OE
to DQ Low-Z
tOEL
5
ns
OE
Access Time
tOEA
35
45
55
ns
OE
Data-Off Time
tOEZ
25
30
35
ns
Output Hold from
Address
tOH
5
ns