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參數(shù)資料
| 型號： | DS1386P-32-120 |
| 廠商： | Maxim Integrated Products |
| 文件頁數(shù)： | 15/21頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC TIMEKEEPER RAM 256K 32-PCM |
| 標(biāo)準(zhǔn)包裝： | 40 |
| 類型： | 時鐘/日歷 |
| 特點： | 警報器，閏年，NVSRAM，方波輸出，監(jiān)視計時器 |
| 存儲容量： | 32KB |
| 時間格式： | HH:MM:SS:hh（12/24 小時） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | 并聯(lián) |
| 電源電壓： | 4.5 V ~ 5.5 V |
| 電壓 - 電源，電池： | 3V |
| 工作溫度： | 0°C ~ 70°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 34-PowerCap? 模塊 |
| 供應(yīng)商設(shè)備封裝： | 34-PowerCap 模塊 |
| 包裝： | 管件 |
DS1386/1386P
3 of 21
PACKAGES
The DS1386 is available in two packages (32-pin encapsulated DIP module and 34-pin PowerCap
module). The 32-pin DIP style module integrates the crystal, lithium energy source, and silicon all in one
package. The 34-pin PowerCap Module Board is designed with contacts for connection to a separate
PowerCap (DS9034PCX) that contains the crystal and battery. This design allows the PowerCap to be
mounted on top of the DS1386P after the completion of the surface mount process. Mounting the
PowerCap after the surface mount process prevents damage to the crystal and battery due to high
temperatures required for solder reflow. The PowerCap is keyed to prevent reverse insertion. The
PowerCap Module Board and PowerCap are ordered separately and shipped in separate containers. The
part number for the PowerCap is DS9034PCX.
OPERATION—READ REGISTERS
The DS1386 executes a read cycle whenever
WE (Write Enable) is inactive (High), CE (Chip Enable)
and
OE (Output Enable) are active (Low). The unique address specified by the address inputs (A0-A14)
defines which of the registers is to be accessed. Valid data will be available to the eight data output
drivers within tACC (Access Time) after the last address-input signal is stable, providing that CE and OE
access times are also satisfied. If
OE and CE access times are not satisfied, then data access must be
measured from the latter occurring signal (
CE or OE) and the limiting parameter is either tCO for CE or
tOE for OE rather than address access.
OPERATION—WRITE REGISTERS
The DS1386 is in the write mode whenever the
WE (Write Enable) and CE (Chip Enable) signals are in
the active (Low) state after the address inputs are stable. The latter occurring falling edge of
CE or WE
will determine the start of the write cycle. The write cycle is terminated by the earlier rising edge of
CE
or
WE. All address inputs must be kept valid throughout the write cycle. WE must return to the high state
for a minimum recovery state (tWR) before another cycle can be initiated. Data must be valid on the data
bus with sufficient Data Set-Up (tDS) and Data Hold Time (tDH) with respect to the earlier rising edge of
CE or WE. The OE control signal should be kept inactive (High) during write cycles to avoid bus
contention. However, if the output bus has been enabled (
CE and OE active), then WE will disable the
outputs in tODW from its falling edge.
DATA RETENTION
The RAMified Timekeeper provides full functional capability when VCC is greater than 4.5V and write-
protects the register contents at 4.25V typical. Data is maintained in the absence of VCC without any
additional support circuitry. The DS1386 constantly monitors VCC. Should the supply voltage decay, the
RAMified Timekeeper will automatically write-protect itself and all inputs to the registers become “don’t
care.” The two interrupts
INTA and INTB (INTB) and the internal clock and timers continue to run
regardless of the level of VCC. However, it is important to insure that the pull-up resistors used with the
interrupt pins are never pulled up to a value that is greater than VCC + 0.3V. As VCC falls below
approximately 3.0V, a power-switching circuit turns the internal lithium energy source on to maintain the
clock and timer data and functionality. It is also required to insure that during this time (battery backup
mode), the voltage present at
INTA and INTB (INTB) never exceeds 3.0V. During power-up, when VCC
rises above approximately 3.0V, the power switching circuit connects external VCC and disconnects the
internal lithium energy source. Normal operation can resume after VCC exceeds 4.5V for a period of
200ms.
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| DS1386P-8-120 | IC TIMEKEEPER RAM 64K 34-PCM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1386P32-120 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:RAMified Watchdog Timekeeper |
| DS1386P-32-120+ | 功能描述:實時時鐘 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1386P-8-120 | 功能描述:實時時鐘 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1386P-8-120+ | 功能描述:IC TIMEKEEPER RAM 64K 34-PCM RoHS:是 類別:集成電路 (IC) >> 時鐘/計時 - 實時時鐘 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:- 類型:時鐘/日歷 特點:警報器，閏年，SRAM 存儲容量:- 時間格式:HH:MM:SS（12/24 小時） 數(shù)據(jù)格式:YY-MM-DD-dd 接口:SPI 電源電壓:2 V ~ 5.5 V 電壓 - 電源，電池:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN EP 包裝:管件 |
| DS1387 | 制造商:Maxim Integrated Products 功能描述: |
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