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參數(shù)資料
| 型號(hào)： | DS1350Y-70 |
| 元件分類： | DRAM |
| 英文描述： | 4096k Nonvolatile SRAM with Battery Monitor |
| 中文描述： | 4096k非易失SRAM與電池監(jiān)視器 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 228K |
| 代理商： | DS1350Y-70 |
DS1350Y/AB
9 of 12
9.
Each DS1230Y has a built-in switch that disconnects the lithium source until V
CC
is first applied by
the user. The expected t
DR
is defined as accumulative time in the absence of V
CC
starting from the
time power is first applied by the user.
10.
All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0
°
C to 70
°
C. For industrial products (IND), this range is -40
°
C to
+85
°
C.
11.
In a power-down condition the voltage on any pin may not exceed the voltage on V
CC
.
12.
t
WR1
and t
DH1
are measured from
WE
going high.
13.
t
WR2
and t
DH2
are measured from
CE
going high.
14.
RST
and
BW
are open drain outputs and cannot source current. External pullup resistors should be
connected to these pins for proper operation. Both pins will sink 10 mA.
DC TEST CONDITIONS
Outputs Open
Cycle = 200 ns for operating current
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
ORDERING INFORMATION
DS1350 TTP - SSS - III
Operating Temperature Range
blank: 0
°
to 70
°
IND: -40
°
to +85
°
C
Access Speed
70:
70 ns
100:
100 ns
Package Type
P:
34-pin PowerCap Module
V
CC
Tolerance
AB:
±
5%
Y:
±
10%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1350YP-70-IND | Isolation Transformer Receive |
| DS1350AB-70 | 4096k Nonvolatile SRAM with Battery Monitor |
| DS1350Y | 4096k Nonvolatile SRAM with Battery Monitor |
| DS1350BL-100-IND | NVRAM (Battery Based) |
| DS1350BL-70 | NVRAM (Battery Based) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1350YL-100 | 功能描述:IC NVSRAM 4MBIT 100NS 34LPM RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
| DS1350YL-100-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1350YL-70 | 功能描述:IC NVSRAM 4MBIT 70NS 34LPM RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
| DS1350YL-70IND | 功能描述:IC NVSRAM 4MBIT 70NS 34LPM RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
| DS1350YL-70-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
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