參數(shù)資料
型號(hào): DS1321
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 電源管理
英文描述: Flexible Nonvolatile Controller with Lithium Battery Monitor(帶鋰電池監(jiān)控的靈活非易失性控制器)
中文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDIP16
封裝: 0.300 INCH, DIP-16
文件頁數(shù): 2/12頁
文件大小: 92K
代理商: DS1321
DS1321
022598 2/12
DESCRIPTION
The DS1321 Flexible Nonvolatile Controller with Lith-
ium Battery Monitor is a CMOS circuit which solves the
application problem of converting CMOS SRAMs into
nonvolatile memory. Incoming power is monitored for
an out–of–tolerance condition. When such a condition
is detected, chip enable outputs are inhibited to accom-
plish write protection and the battery is switched on to
supply the SRAMs with uninterrupted power. Special
circuitry uses a low–leakage CMOS process which
affords precise voltage detection at extremely low bat-
tery consumption. One DS1321 can support as many
as four SRAMs arranged in any of three memory config-
urations.
In addition to battery–backup support, the DS1321 per-
forms the important function of monitoring the remaining
capacity of the lithium battery and providing a warning
before the battery reaches end–of–life. Because the
open–circuit voltage of a lithium backup battery remains
relatively constant over the majority of its life, accurate
battery monitoring requires loaded–battery voltage
measurement. The DS1321 performs such measure-
ment by periodically comparing the voltage of the bat-
tery, as it supports an internal resistive load, with a care-
fully selected reference voltage. If the battery voltage
falls below the reference voltage under such conditions,
the battery will soon reach end–of–life. As a result, the
Battery Warning pin is activated to signal the need for
battery replacement.
MEMORY BACKUP
The DS1321 performs all the circuit functions required
to provide battery–backup for as many as four SRAMs.
First, the device provides a switch to direct power from
the battery or the system power supply (V
CCI
). When-
ever V
CCI
is less than the V
CCTP
trip point and V
CCI
is
less than the battery voltage V
BAT
, the battery is
switched in to provide backup power to the SRAM. This
switch has voltage drop of less than 0.2 volts.
Second, the DS1321 handles power failure detection
and SRAM write–protection. V
CCI
is constantly moni-
tored, and when the supply goes out of tolerance, a pre-
cision comparator detects power failure and inhibits the
four chip enable outputs in order to write–protect the
SRAMs. This is accomplished by holding CEO1
through CEO4 to within 0.2 volts of V
CCO
when V
CCI
is
out of tolerance. If any CEI is active (low) at the time that
power failure is detected, the corresponding CEO signal
is kept low until the CEI signal is brought high again.
Once the CEI signal is brought high, the CEO signal is
taken high and held high until after V
CCI
has returned to
its nominal voltage level. If the CEI signal is not brought
high by 1.5
μ
s after power failure is detected, the corre-
sponding CEO is forced high at that time. This specific
scheme for delaying write protection for up to 1.5
μ
s
guarantees that any memory access in progress when
power failure occurs will complete properly. Power fail-
ure detection occurs in the range of 4.75 to 4.5 volts (5%
tolerance) when the TOL pin is wired to GND or in the
range of 4.5 to 4.25 volts (10% tolerance) when TOL is
connected to V
CCO
.
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