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參數(shù)資料
| 型號： | DS1270AB-100IND |
| 英文描述： | 16M Nonvolatile SRAM |
| 中文描述： | 1,600非易失SRAM |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | DS1270AB-100IND |
DS1270Y/AB
7 of 8
8. If
WE
is low or the
WE
low transition occurs prior to or simultaneously with the
CE
low transition,
the output buffers remain in a high-impedance state during this period.
9. Each DS1270 has a built-in switch that disconnects the lithium source until the user first applies V
CC
.
The expected t
DR
is defined as accumulative time in the absence of V
CC
starting from the time power
is first applied by the user. This parameter is assured by component selection, process control, and
design. It is not measured directly during production testing.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0
°
C to 70
°
C. For industrial products (IND), this range is -40
°
C to
+85
°
C.
11. In a power-down condition the voltage on any pin may not exceed the voltage on V
CC
.
12. t
WR1
and t
DH1
are measured from
WE
going high.
13. t
WR2
and t
DH2
are measured from
CE
going high.
14. DS1270 modules are recognized by Underwriters Laboratory (U.L.
) under file E99151.
DC TEST CONDITIONS
AC TEST CONDITIONS
Outputs Open
Output Load: 100 pF + 1TTL Gate
Cycle = 200ns for operating current
Input Pulse Levels: 0.0 to 3.0 volts
All voltages are referenced to ground
Timing Measurement Reference Levels
Input pulse Rise and Fall Times: 5 ns
ORDERING INFORMATION
DS1270 TTP - SSS - III
Access Speed
70:
100:
Package Type
blank: 36-pin 600-mil DIP
V
CC
Tolerance
AB:
±
5%
Y:
±
10%
Input: 1.5V
Output: 1.5V
Operating Temperature Range
blank: 0
°
to 70
°
IND: -40
°
to +85
°
C
70 ns
100 ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1270AB-70 | 16M Nonvolatile SRAM |
| DS1270AB-70IND | 16M Nonvolatile SRAM |
| DS1270Y | 16M Nonvolatile SRAM |
| DS1270Y-100 | 16M Nonvolatile SRAM |
| DS1270Y-100IND | 16M Nonvolatile SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1270AB-70 | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1270AB-70# | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1270AB-70IND | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1270AB-70IND# | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1270W-100 | 功能描述:NVRAM 3.3V 16M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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