參數(shù)資料
型號(hào): DS1265AB-100
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類(lèi): Static RAM
英文描述: 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36
封裝: 0.740 INCH, DIP-36
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 188K
代理商: DS1265AB-100
DS1265Y/AB
3 of 8
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +6.0V
Operating Temperature
0°C to 70°C; -40°C to +85°C for IND parts
Storage Temperature
-40°C to +70°C; -40°C to +85°C for IND parts
Soldering Temperature
+260°C for 10 seconds
Caution: Do Not Reflow
(Wave or Hand Solder Only)
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(tA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
DS1265AB Power Supply Voltage
VCC
4.75
5.0
5.25
V
DS1265Y Power Supply Voltage
VCC
4.5
5.0
5.5
V
Logic 1 Input Voltage
VIH
2.2
VCC
V
Logic 0 Input Voltage
VIL
0
+0.8
V
DC ELECTRICAL
(VCC=5V
± 5% for DS1265AB)
CHARACTERISTICS
(tA: See Note 10) (VCC=5V
± 10% for DS1265Y)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Input Leakage Current
IIL
-2.0
+2.0
mA
I/O Leakage Current
IIO
-2.0
+2.0
mA
Output Current @ 2.4V
IOH
-1.0
mA
Output Current @ 0.4V
IOL
2.0
mA
Standby Current CE =2.2V
ICCS1
1.0
1.5
mA
Standby Current CE =VCC-0.5V
ICCS2
100
200
mA
Operating Current
ICCO1
85
mA
Write Protection Voltage (DS1265AB)
VTP
4.50
4.62
4.75
V
Write Protection Voltage (DS1265Y)
VTP
4.25
4.37
4.5
V
CAPACITANCE
(tA=25
°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Input Capacitance
CIN
10
20
pF
Output Capacitance
CI/O
10
20
pF
相關(guān)PDF資料
PDF描述
DS1265Y-70 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA36
DS1265AB 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36
DS1265Y 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36
DS1265Y-100 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DIP36
DS1265AB-70 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, DIP36
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS1265AB-100+ 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1265AB-100-IND 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NVRAM (Battery Based)
DS1265AB-70 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1265AB-70+ 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1265AB-70IND 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube