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參數(shù)資料
| 型號： | DS1258Y-100 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 128K X 16 NON-VOLATILE SRAM MODULE, 100 ns, DIP40 |
| 封裝： | 0.740 INCH, EXTENDED MODULE, DIP-40 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 156K |
| 代理商： | DS1258Y-100 |
DS1258Y/AB
7 of 8
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CEU or CEL low
transition, the output buffers remain in a high impedance state during this period.
9. Each DS1258 has a built-in switch that disconnects the lithium source until VCC is first applied by the
user. The expected tDR is defined as accumulative time in the absence of VCC starting from the time
power is first applied by the user.
10. All AC and DC electrical characteristics are valid over the full operating temperature range 0
°C to
70
°C.
11. In a power-down condition the voltage on any pin may not exceed the voltage on VCC.
12. tWR1, tDH1 are measured from WE going high.
13. tWR2, tDH2 are measured from CEU OR CEL going high
DC TEST CONDITIONS
AC TEST CONDITIONS
Outputs Open
Output Load: 100 pF + 1TTL Gate
Cycle = 200 ns
Input Pulse Levels:
All voltages are referenced to ground
0.0 to 3.0 volts
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
ORDERING INFORMATION
DS1250 TTP - SSS - III
Operating Temperature Range
blank: 0
°C to 70°C
Access Speed
70:
70 ns
100:
100 ns
Package Type
blank: 40-pin, 600-mil DIP
VCC Tolerance
AB:
±5%
Y:
±10%
相關PDF資料 |
PDF描述 |
|---|---|
| DS1265AB-100 | 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36 |
| DS1265Y-70 | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA36 |
| DS1265AB | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| DS1265Y | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| DS1265Y-100 | 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DIP36 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS1258Y-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258Y-100-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258Y-70 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258Y-70# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258Y-70IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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