參數(shù)資料
型號(hào)： DS1244YP-70
廠商： Maxim Integrated Products
文件頁(yè)數(shù)： 10/20頁(yè)
文件大?。?/td> 0K
描述： IC NVSRAM 256KBIT 70NS 34PCM
標(biāo)準(zhǔn)包裝： 40
類型： Phantom 計(jì)時(shí)芯片
特點(diǎn)： 閏年，NVSRAM
存儲(chǔ)容量： 32KB
時(shí)間格式： HH:MM:SS:hh（12/24 小時(shí)）
數(shù)據(jù)格式： YY-MM-DD-dd
接口： 并聯(lián)
電源電壓： 4.5 V ~ 5.5 V
電壓 - 電源，電池： 3V
工作溫度： 0°C ~ 70°C
安裝類型： 表面貼裝
封裝/外殼： 34-PowerCap? 模塊
供應(yīng)商設(shè)備封裝： 34-PowerCap 模塊
包裝： 管件
DS1244/DS1244P
18 of 20
AC TEST CONDITIONS
Output Load: 50pF + 1TTL Gate
Input Pulse Levels: 0 to 3V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
NOTES:
1) WE is high for a read cycle.
2) OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high-impedance
state.
3) tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4) tDH, tDS are measured from the earlier of CE or WE going high.
5) These parameters are sampled with a 50pF load and are not 100% tested.
6) If the CE low transition occurs simultaneously with or later than the WE low transition in Write
Cycle 1, the output buffers remain in a high-impedance state during this period.
7) If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high-impedance state during this period.
8) If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
9) The expected tDR is defined as cumulative time in the absence of VCC with the clock oscillator
running.
10) tWR is a function of the latter occurring edge of WE or CE .
11) Voltages are referenced to ground.
12) RST (Pin 1) has an internal pullup resistor.
13) RTC modules can be successfully processed through conventional wave-soldering techniques as long
as temperature exposure to the lithium energy source contained within does not exceed +85°C. Post-
solder cleaning with water-washing techniques is acceptable, provided that ultrasonic vibration is not
used.
In addition, for the PowerCap:
1) Maxim recommends that PowerCap module bases experience one pass through solder reflow oriented
with the label side up (“l(fā)ive-bug”).
2) Hand soldering and touch-up: Do not touch or apply the soldering iron to leads for more than three
seconds.
– To solder, apply flux to the pad, heat the lead frame pad, and apply solder. To remove the part,
apply flux, heat the lead frame pad until the solder reflows, and use a solder wick to remove
solder.
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參數(shù)描述
DS1244YP-70+ 功能描述:實(shí)時(shí)時(shí)鐘 256k NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube
DS-1244ZJ 制造商:Hikvision USA 功能描述:DOME CAM CEILING TRIM BRACKET4.75IN X .95IN 制造商:HIKVISION 功能描述:DOME CAM CEILING TRIM BRACKET 4.75IN X .95IN
DS1245 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3.3V 1024k Nonvolatile SRAM
DS1245AB 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:1024k Nonvolatile SRAM
DS1245AB-100 功能描述:NVRAM 1024K SRAM Nonvolatile RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
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