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參數(shù)資料
| 型號： | DS1225AD-70 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 8K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP28 |
| 封裝： | 0.720 INCH, EXTENDED, DIP-28 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 147K |
| 代理商： | DS1225AD-70 |
DS1225AB/AD
3 of 10
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +7.0V
Operating Temperature
0°C to 70°C; -40°C to +85°C for IND parts
Storage Temperature
-40°C to +70°C; -40°C to +85°C for IND parts
Soldering Temperature
260°C for 10 seconds
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(TA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
DS1225AB Power Supply Voltage
VCC
4.75
5.0
5.25
V
DS1225AD Power Supply Voltage
VCC
4.50
5.0
5.5
V
Logic 1
VIH
2.2
VCC
V
Logic 0
VIL
0.0
+0.8
V
(VCC =5V ± 5% for DS1225AB)
(TA: See Note 10)
DC ELECTRICAL CHARACTERISTICS
(VCC =5V ± 10% for DS1225AD)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Leakage Current
IIL
-1.0
+1.0
A
I/O Leakage Current
CE > VIH< VCC
IIO
-1.0
+1.0
A
Output Current @ 2.4V
IOH
-1.0
mA
Output Current @ 0.4V
IOL
2.0
mA
Standby Current CE =2.2V
ICCS1
5.0
10.0
mA
Standby Current CE =VCC -0.5V
ICCS2
3.0
5.0
mA
Operating Current tCYC=200 ns
(Commercial)
ICC01
75
mA
Operating Current tCYC=200 ns
(Industrial)
ICC01
85
mA
Write Protection Voltage
(DS1225AB)
VTP
4.50
4.62
4.75
V
Write Protection Voltage
(DS1225AD)
VTP
4.25
4.37
4.5
V
CAPACITANCE
(TA =25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Capacitance
CIN
510
pF
Input/Output Capacitance
CI/O
510
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1225AB-200 | 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 |
| DS1225Y-170 | 8K X 8 NON-VOLATILE SRAM MODULE, 170 ns, PDIP28 |
| DS1225Y-150 | 8K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP28 |
| DS1225Y | 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 |
| DS1230AB | 32K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA28 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1225AD-70+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225AD70IND | 制造商:UNBRANDED 功能描述:ELECTRONIC PARTS DM54LS283W THROUGH*NIC* |
| DS1225AD-70IND | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225AD-70-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:64k Nonvolatile SRAM |
| DS1225AD-70IND+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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