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參數(shù)資料
| 型號： | DS1225AB-70-IND |
| 元件分類： | DRAM |
| 英文描述： | 64k Nonvolatile SRAM |
| 中文描述： | 64K的非易失SRAM |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 147K |
| 代理商： | DS1225AB-70-IND |
DS1225AB/AD
3 of 10
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-0.3V to +7.0V
0°C to 70°C; -40°C to +85°C for IND parts
-40°C to +70°C; -40°C to +85°C for IND parts
260°C for 10 seconds
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
DS1225AB Power Supply Voltage
DS1225AD Power Supply Voltage
Logic 1
Logic 0
(T
A
: See Note 10)
UNITS
V
V
V
V
SYMBOL
V
CC
V
CC
V
IH
V
IL
MIN
4.75
4.50
2.2
0.0
TYP
5.0
5.0
MAX
5.25
5.5
V
CC
+0.8
NOTES
(V
CC
=5V ± 5% for DS1225AB)
(T
A
: See Note 10)
DC ELECTRICAL CHARACTERISTICS
(V
CC
=5V ± 10% for DS1225AD)
PARAMETER
SYMBOL
Input Leakage Current
I
IL
I/O Leakage Current
CE> V
IH
< V
CC
Output Current @ 2.4V
I
OH
Output Current @ 0.4V
I
OL
Standby Current CE =2.2V
I
CCS1
Standby Current CE =V
CC
-0.5V
I
CCS2
Operating Current t
CYC
=200 ns
(Commercial)
Operating Current t
CYC
=200 ns
(Industrial)
Write Protection Voltage
(DS1225AB)
Write Protection Voltage
(DS1225AD)
MIN
-1.0
TYP
MAX
+1.0
UNITS
μ
A
NOTES
I
IO
-1.0
+1.0
μ
A
-1.0
2.0
mA
mA
mA
mA
5.0
3.0
10.0
5.0
I
CC01
75
mA
I
CC01
85
mA
V
TP
4.50
4.62
4.75
V
V
TP
4.25
4.37
4.5
V
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
(T
A
=25°C)
UNITS
pF
pF
SYMBOL
C
IN
C
I/O
MIN
TYP
5
5
MAX
10
10
NOTES
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PDF描述 |
|---|---|
| DS1225AB-70 | 64k Nonvolatile SRAM |
| DS1225AB-200-IND | 64k Nonvolatile SRAM |
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| DS1225AB-170-IND | 64k Nonvolatile SRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1225AB-70IND+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225AB85 | 制造商:Maxim Integrated Products 功能描述: |
| DS1225AB-85 | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225AB-85+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225AB-85-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:64k Nonvolatile SRAM |
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