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參數(shù)資料
| 型號： | DS1221 |
| 英文描述： | Nonvolatile Controller x 4 Chip |
| 中文描述： | 非易失控制器× 4芯片 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 134K |
| 代理商： | DS1221 |
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NOT RECOMMENDED FOR NEW DESIGNS, SEE DS1321 DATASHEET INSTEAD.
FEATURES
Converts CMOS RAMs into nonvolatile
memories
Data is automatically protected during power loss
2-to-4 decoder provides for up to 4 CMOS
RAMs
Provides for redundant batteries
Test battery condition on power-up
Full ±10% operating range
Unauthorized access can be prevented with
optional security feature
16-pin 0.3-inch DIP saves PC board space
Optional 16-pin SOIC surface mount package
Optional industrial temperature range of
-40°C to +85°C available
PIN DESCRIPTION
A, B
- Address Inputs
- Chip Enable Input
- Chip Enable Outputs
- + Battery 1
- + Battery 2
- Reset
- +5V Supply
- RAM Supply
- Read Inpu
- Write Input
- Data Input/Output
CE
CE0
-
CE3
V
BAT1
V
BAT2
*
RST
V
CCI
V
CCO
*
RD
*
WE
*D/Q
PIN ASSIGNMENT
*Used with optional security circuit only and must be connected to ground in all other cases.
DESCRIPTION
The DS1221 Nonvolatile Controller x 4 Chip is a CMOS circuit which solves the application problem of
converting CMOS RAMs into nonvolatile memories. Incoming power is monitored for an out-of-
tolerance condition. When such a condition is detected, the chip enable outputs are inhibited to
accomplish write protection and the battery is switched on to supply RAMs with uninterrupted power. An
optional security code prevents unauthorized users from obtaining access to the memory space. The
nonvolatile controller/decoder circuitry uses a low-leakage CMOS process which affords precise voltage
detection at extremely low battery consumption. By combining the DS1221 with up to four CMOS
memories and lithium batteries, nonvolatile operation can be achieved.
DS1221
Nonvolatile Controller x 4 Chip
www.dalsemi.com
VCCO
VBAT1
*RST
A
B
*RD
*WE
GND
VCCI
VBAT2
CE0
CE2
CE3
*D/Q
CE
CE1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
DS1221 16-Pin DIP (300-mil)
See Mech. Drawings Section
VCCO
VBAT1
*RST
A
B
*RD
*WE
GND
VCCI
VBAT2
CE0
CE2
CE3
*D/Q
CE
CE1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
DS1221 16-Pin SOIC (300-mil)
See Mech. Drawings Section
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1230 | 3.3V 256k Nonvolatile SRAM |
| DS1230ABP-150-IND | GT 6C 3#0 3#12 PIN PLUG |
| DS1230ABP-200-IND | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GTS; No. of Contacts:6; Connector Shell Size:36; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight |
| DS1230ABP-85-IND | GT 3C 3#0 PIN PLUG |
| DS1230AB-100 | M39012 MIL RF CAP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1221S | 功能描述:IC CTRLR/DECODER 4BIT 16-SOIC RoHS:否 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件 |
| DS1221S/T&R | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: |
| DS1221S/T&R | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1221SN | 功能描述:IC CTRLR/DECODER 4BIT IN 16-SOIC RoHS:否 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件 |
| DS1222 | 功能描述:IC BANKSWITCH CMOS 14-DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件 |
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