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參數(shù)資料
| 型號： | DS1220Y-200 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| 封裝： | 0.720 INCH, EXTENDED, DIP-24 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 144K |
| 代理商： | DS1220Y-200 |
DS1220Y
7 of 8
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state during this period.
9. Each DS1220Y is marked with a 4-digit date code AABB. AA designates the year of manufacture.
BB designates the week of manufacture. The expected tDR is defined as starting at the date of
manufacture.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
11. In a power-down condition the voltage on any pin may not exceed the voltage of VCC .
12. tWR1 , tDH1 are measured from WE going high.
13. tWR2 , tDH2 are measured from CE going high.
14. DS1220Y modules are recognized by Underwriters Laboratory (U.L.
) under file E99151 (R).
DC TEST CONDITIONS
Outputs open.
All voltages are referenced to ground.
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0-3.0V
Timing Measurement Reference Levels
Input:1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
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PDF描述 |
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| DS1220Y-150 | 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 |
| DS1220Y | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| DS1222S | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO16 |
| DS1222 | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP14 |
| DS1225AB-170 | 8K X 8 NON-VOLATILE SRAM MODULE, 170 ns, DMA28 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1220Y-200+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220Y-200-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1220Y-200IND+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1221 | 功能描述:IC CTRLR/DECODER 4BIT 16-DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件 |
| DS1221S | 功能描述:IC CTRLR/DECODER 4BIT 16-SOIC RoHS:否 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件 |
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