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參數(shù)資料
| 型號(hào)： | DS1220AD-120-IND |
| 英文描述： | 16k Nonvolatile SRAM |
| 中文描述： | 16K的非易失SRAM |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 136K |
| 代理商： | DS1220AD-120-IND |
DS1220AB/AD
7 of 9
POWER-DOWN/POWER-UP CONDITION
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING
PARAMETER
(t
A
: See Note 10)
MAX
UNITS
μ
s
μ
s
μ
s
125
ms
SYMBOL
t
PD
t
F
t
R
t
REC
MIN
0
300
300
2
TYP
NOTES
11
CE
at
V
IH
before Power-Down
V
CC
slew from V
TP
to 0v
V
CC
slew from 0
V
to V
TP
CE
at V
IH
after Power-Up
(T
A
=25°C)
UNITS
years
PARAMETER
Expected Data Retention Time
SYMBOL
t
DR
MIN
10
TYP
MAX
NOTES
9
WARNING:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in the
battery backup mode.
NOTES:
1.
WEis high for a read cycle.
2.
OE= V
IH
or V
IL
. If OE= V
IH
during write cycle, the output buffers remain in a high-impedance state.
3.
t
WP
is specified as the logical AND of CEand WE. t
WP
is measured from the latter of CE or CE
going low to the earlier of CE or WE going high.
4.
t
DS
is measured from the earlier of CE or WE going high.
5.
These parameters are sampled with a 5 pF load and are not 100% tested.
6.
If the CE low transition occurs simultaneously with or later than the WE low transition, the output
buffers remain in a high-impedance state during this period.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1220AD-150-IND | 16k Nonvolatile SRAM |
| DS1220AD-170 | 64k Nonvolatile SRAM |
| DS1220AD-170IND | 64k Nonvolatile SRAM |
| DS1220AD-200 | 64k Nonvolatile SRAM |
| DS1220AD-200-IND | 16k Nonvolatile SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1220AD150 | 制造商:DALLAS 功能描述:* |
| DS1220AD-150 | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-150+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-150-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AD-170 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:64k Nonvolatile SRAM |
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