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參數(shù)資料
| 型號(hào)： | DS1216 |
| 英文描述： | SmartWatch RAM DS1216B/C/D/H SmartWatch ROM DS1216E/F |
| 中文描述： | SmartWatch RAM DS1216B/C/D/HSmartWatch ROM DS1216E/F |
| 文件頁(yè)數(shù)： | 12/13頁(yè) |
| 文件大?。?/td> | 334K |
| 代理商： | DS1216 |
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DS1216
12 of 13
NOTES:
1)
Pin locations are designated “U” when a parameter definition refers to the socket receptacle and “L”
when a parameter definition refers to the socket pin.
2)
No memory inserted in the socket.
3)
Pin 26L can be connected to V
CC
or left disconnected at the PC board.
4)
SmartWatch sockets can be successfully processed through some conventional wave-soldering
techniques as long as temperature exposure to the lithium energy source contained within does not
exceed +85 C. However, post-solder cleaning with water washing techniques is not permissible.
Discharge to the lithium energy source can result, even if deionized water is utilized. It is equally
imperative that ultrasonic vibration is not used in order to avert damage to the quartz crystal resonator
employed by the oscillator circuit.
5)
t
CE
max must be met to ensure data integrity on power loss.
6)
V
CCO
1 is the maximum voltage drop from Vcc(L) to Vcc(U) while power is being supplied by
Vcc(L). V
CCO
2 is the maximum voltage drop from V
BAT
to V
CC
(U) while the part is in battery backup.
7)
Input pulse rise and fall times equal 10ns.
8)
Applies to pins RST L, A2 L, A0 L, CE L, OE L, and WE L.
9)
t
WR
is a functions of the latter occurring edge of
WE
or
CE
.
10)
t
DH
and t
DS
are a function of the first occurring edge of
WE
or
CE
.
11)
Tas is a function of the first occurring edge of OE or CE.
12)
Tah is a function of the latter occurring edge of OE or CE
13)
RST
(Pin 1) has an internal pullup resistor.
14)
Expected data retention is based on using an external SRAM with a data retention current of less than
0.5μA at +25°C. Expected data retention time (time while on battery) for a given RAM battery
current can be calculated using the following formula:
0.045 / (current in amps) = data retention time in hours
15)
The DS1216 products are shipped with the battery-backup power off. First power-up switches backup
battery on to clock and RAM V
CC
pin upon power down.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1216B | SmartWatch RAM DS1216B/C/D/H SmartWatch ROM DS1216E/F |
| DS1216C | SmartWatch RAM DS1216B/C/D/H SmartWatch ROM DS1216E/F |
| DS1216D | SmartWatch RAM DS1216B/C/D/H SmartWatch ROM DS1216E/F |
| DS1216E | SmartWatch RAM DS1216B/C/D/H SmartWatch ROM DS1216E/F |
| DS1216F | SmartWatch RAM DS1216B/C/D/H SmartWatch ROM DS1216E/F |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1216B | 功能描述:存儲(chǔ)器控制器 SmartWatch RAM RoHS:否 制造商:Maxim Integrated |
| DS1216C | 功能描述:存儲(chǔ)器控制器 SmartWatch RAM RoHS:否 制造商:Maxim Integrated |
| DS1216D | 功能描述:存儲(chǔ)器控制器 SmartWatch RAM RoHS:否 制造商:Maxim Integrated |
| DS1216E | 功能描述:存儲(chǔ)器控制器 SmartWatch ROM RoHS:否 制造商:Maxim Integrated |
| DS1216F | 功能描述:IC SMART/ROM 3V 64/256/1M 32DIP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件 |
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