參數(shù)資料
型號: DS1213B
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 存儲器
英文描述: SmartSocket 16K/64M(16K/64K位帶掉電保護(hù)SRAM智能插卡)
中文描述: SPECIALTY MEMORY CIRCUIT, PDIP28
封裝: 0.600 INCH, DIP-28
文件頁數(shù): 5/6頁
文件大?。?/td> 53K
代理商: DS1213B
DS1213B
031998 5/6
TIMING DIAGRAM: POWER–UP
4.75V
4.5V
CE PIN 20 L
V
IH
V
IL
V
BAT
- 0.2V
CE PIN 20 U
V
IL
t
REC
t
PD
t
R
V
CC
PIN 26 L, PIN 28 L
WARNINGS:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery backup mode.
Water washing for flux removal will discharge internal lithium source because exposed voltage pins
are present.
NOTES:
1. All voltages are referenced to ground.
2. Measured with a load as shown in Figure 1.
3. Pin locations are designated “U” (for upper) when a parameter definition refers to the socket receptacle and “L”
(for lower) when a parameter definition refers to the socket pin.
4. No memory inserted in the socket.
5. Pin 26 L may be connected to V
CC
or left disconnected at the PC board.
6. I
BAT
is the maximum load current which a correctly installed memory can use in the data retention mode and meet
data retention expectations of more than 10 years at 25
°
C.
7. t
CE
max. must be met to ensure data integrity on power loss.
8. V
CC
is within nominal limits and a memory is installed in the socket.
9. Input pulse rise and fall times equal 10 ns.
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