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參數(shù)資料
| 型號： | DS1210+ |
| 廠商： | Maxim Integrated |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC CONTROLLER CHIP NV 8-DIP |
| 產(chǎn)品培訓模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標準包裝： | 50 |
| 控制器類型： | 非易失性 RAM |
| 電源電壓： | 4.75 V ~ 5.5 V |
| 工作溫度： | 0°C ~ 70°C |
| 封裝/外殼： | 8-DIP（0.300"，7.62mm） |
| 供應商設備封裝： | 8-PDIP |
| 包裝： | 管件 |
DS1210
4 of 8
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground
-0.3V to +7.0V
Operating Temperature Range
0°C to +70°C, -40°C to +85°C for N parts
Storage Temperature Range
-55°C to +125°C
Soldering Temperature (reflow, SO)
+260°C
Lead Temperature (soldering, 10s)
+300°C
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of
time may affect reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
PDIP
Junction-to-Ambient Thermal Resistance (θJA).…………………...…………………………...….110°C/W
Junction-to-Case Thermal Resistance (θJC)…………………………………………………………40°C/W
SO
Junction-to-Ambient Thermal Resistance (θJA).…………………………………………………….70°C/W
Junction-to-Case Thermal Resistance (θJC)…………………………………………………………23°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board for the SO.
For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
RECOMMENDED OPERATING CONDITIONS
(Note 10)
PARAMETER
SYMBOL
4B
MIN
TYP
MAX
UNITS
0B
NOTES
TOL = GND Supply Voltage
VCCI
4.75
5.0
5.5
V
2
TOL = VCCO Supply Voltage
VCCI
4.5
5.0
5.5
V
2
Logic 1 Input
VIH
2.2
VCC+0.3
V
2
Logic 0 Input
VIL
-0.3
+0.8
V
2
Battery Input
VBAT1,
VBAT2
2.0
4.0
V
2, 3
DC ELECTRICAL CHARACTERISTICS
(Note 10; VCCI = 4.75 to 5.5V, TOL = GND)
(VCCI = 4.5 to 5.5V, TOL = VCCO)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
1B
NOTES
Supply Current
ICCI
5
mA
4
Supply Voltage
VCCO
VCC-0.2
V
2
Supply Current
ICCO1
80
mA
5
Input Leakage
IIL
-1.0
+1.0
A
Output Leakage
ILO
-1.0
+1.0
A
CEO
Output @ 2.4V
IOH
-1.0
mA
6
CEO
Output @ 0.4V
IOL
4.0
mA
6
VCC Trip Point (TOL=GND)
VCCTP
4.50
4.62
4.74
V
2
VCC Trip Point (TOL=VCCO)
VCCTP
4.25
4.37
4.49
V
2
CEO
Output
VOHL
VBAT-0.2
V
8
VBAT1 or VBAT2
Battery Current
IBAT
100
nA
3, 4
Battery Backup Current
@ VCCO = VBAT – 0.3V
ICCO2
50
A
7, 8
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