參數(shù)資料
型號: DRDNB21D-7
廠商: DIODES INC
元件分類: 功率晶體管
英文描述: COMPLEX ARRAY FOR DUAL RELAY DRIVER
中文描述: 100 mA, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: GREEN, PLASTIC PACKAGE-6
文件頁數(shù): 2/5頁
文件大?。?/td> 101K
代理商: DRDNB21D-7
DS30756 Rev. 3 - 2
2 of 5
DRDNB21D
www.diodes.com
Characteristic
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
Value
100
Unit
V
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 3)
Average Rectified Output Current (Note 3)
75
V
53
500
250
4.0
2.0
V
mA
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0 s
@ t = 1.0s
I
FSM
A
Maximum Ratings, Switching Diode
@ T
A
= 25 C unless otherwise specified
Electrical Characteristics, Pre-Biased NPN Transistor
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
V
l(off)
V
l(on)
V
O(on)
I
l
I
O(off)
G
l
R1
R2/R1
Min
0.5
Typ
Max
Unit
V
V
V
mA
uA
Test Condition
Input Voltage
V
CC
= 5V, I
O
= 100 A
V
O
= 0.3V, I
O
= 5mA
I
O
/I
l
= 50mA/0.25mA
V
I
= 5V
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 10mA
1.1
0.3
3.6
0.5
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistance Ratio Tolerance
80
-30
-20
+30
+20
%
%
Gain-Bandwidth Product*
f
T
250
MHz
V
= 10V, I
E
= 5mA,
f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics, Switching Diode
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
V
(BR)R
Min
75
0.62
Max
Unit
V
Test Condition
I
R
= 10 A
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
j
= 150 C
V
R
= 25V, T
j
= 150 C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Reverse Breakdown Voltage (Note 4)
Forward Voltage (Note 4)
V
F
0.72
0.855
1.0
1.25
2.5
50
30
25
4.0
V
Reverse Current (Note 4)
I
R
A
A
A
nA
pF
Total Capacitance
C
T
Reverse Recovery Time
t
rr
4.0
ns
Notes: 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf
.
4. Short duration pulse test used to minimize self-heating effect.
N
相關(guān)PDF資料
PDF描述
DS1212 Nonvolatile Controller x 16 Chip(非易失性控制器x 16 芯片)
DS1213B(中文) SmartSocket 16K/64M(16K/64K位帶掉電保護SRAM智能插卡)
DS1213B SmartSocket 16K/64M(16K/64K位帶掉電保護SRAM智能插卡)
DS1213C SmartSocket 256K(256K帶掉電保護靜態(tài)RAM插座)
DS1213D SmartSocket 256K/1M(64K/256K/1M位帶掉電保護SRAM智能插卡)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DRDNB26W 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEX ARRAY FOR RELAY DRIVERS
DRDNB26W-7 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN Trans R1-R2 Switch-Relay Drvr RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
DRDP006W 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEX ARRAY FOR RELAY DRIVERS
DRDP006W-7 功能描述:兩極晶體管 - BJT PNP Trans/Switch Diode-Relay Drvr RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DR-DP-1N11-H01 制造商:Drobo 功能描述:DROBO 200 GB INTERNAL SOLID ST 200GB ENTERPRISE SAS SSD DRIVE