參數(shù)資料
型號: DR65-0109TR
英文描述: Single Driver for GaAs FET Switches and Attenuators
中文描述: 單驅(qū)動砷化鎵場效應(yīng)管開關(guān)和衰減
文件頁數(shù): 1/2頁
文件大?。?/td> 213K
代理商: DR65-0109TR
S ingle Driver for GaAs FET
S witc hes and Attenuators
D
SO-8
V 1.00
Features
I
High Speed CMOS Technology
I
Complementary Outputs
I
Positive Voltage Control
I
Low Power Dissipation
I
Plastic SOIC Package for SMT Applications
I
Tape and Reel Packaging Available
Description
M/A-COM's DR65-0109 is a Single channel driver used
to translate TTL control inputs into complementary gate
voltages for GaAs FET microwave switches and
attenuators. High speed analog CMOS technology is
utilized to achieve low power dissipation at moderate to
high speeds, encompassing most microwave switching
applications.
Package outline conforms to JEDEC standard MS-012AA
Guaranteed Operating Ranges
Symbol
Parameter
1
Unit
Min
Typical
Max
VCC
Positive DC Supply Voltage
V
4.5
5.0
5.5
V
EE
Negative DC Supply Voltage
V
-5.5
-5.0
-4.5
V
CC-
V
EE
Positive to Negative Supply Range
V
9.0
10.0
11.0
T
A
Operating Ambient Temperature
°C
-40
+25
+85
I
OH
DC Output Current - HIGH
mA
-1.0
I
OL
DC Output Current - LOW
mA
1.0
T
rise
, T
fall
Maximum Input Rise or Fall Time
nS
500
1. All voltages are relative to GND
Truth Table
Input
V
IN
A
B
0
V
EE
GND
Outputs
1
GND
V
EE
Absolute Maximum Ratings
Parameter
V
CC
Absolute Maximum
- .5V to + 6.0 V
V
EE
- 6.0 V to - .5 V
V
CC
- V
EE
12 V
V
IN
2
V
CC
+ .5 V
V
OUT
V
EE
- .5 V
Storage Temperature
-65°C to +150°C
2. Standard CMOS TTL interface, latch-up will occur if logic
signal is applied prior to power supply.
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