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參數(shù)資料
| 型號： | DQ63318QGA08NNT |
| 廠商： | SYNQOR INC |
| 元件分類： | 電源模塊 |
| 英文描述： | 2-OUTPUT 77 W DC-DC REG PWR SUPPLY MODULE |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 760K |
| 代理商： | DQ63318QGA08NNT |
Product # DQ63318QGL08
Phone 1-888-567-9596
Doc.# 005-2DQ638D Rev. C
11/17/03
Page 7
Performance Curves
48Vin 3.3/1.8Vout 77W
Figure 17: Test set-up diagram showing measurement points for Input
Terminal Ripple Current (Figure 18), Input Reflected Ripple Current
(Figure 19) and Output Voltage Ripple (Figure 20).
Figure 18: Input Terminal Ripple Current, 1.8V & 3.3V outputs at full
rated output current and nominal input voltage with 10H source
impedance and 100F electrolytic capacitor (10 mA/div). (see Fig. 17)
Quarter
Brick Dual
Figure 13: Turn-on transient at full rated load current (resistive load)
(10 ms/div).
Ch 1: 1.8Vout (1V/div); Ch 2: 3.3Vout (1V/div)
Ch 3: ON/OFF input (5V/div)
Figure 14: Turn-on transient at zero load current (10 ms/div).
Ch 1: 1.8Vout (1V/div); Ch 2: 3.3Vout (1V/div)
Ch 3: ON/OFF input (5V/div)
Figure 15: Output voltage response to step-change in Iout1 (50%-75%-50% of
Imax; dI/dt = 0.1A/s). Load cap: 15F, 300 m
ESR tantalum & 1F ceramic.
Vout (100mV/div), Iout (10A/div). Ch1: Vout1; Ch2 Iout1; Ch 3: Vout2; Ch 4 Iout2
Figure 16: Output voltage response to step-change in Iout2 (50%-75%-50% of
Imax; dI/dt = 0.1A/s). Load cap: 15F, 300 m
ESR tantalum & 1F ceramic.
Vout (100mV/div), Iout (10A/div). Ch1: Vout1; Ch2 Iout2; Ch 3: Vout2; Ch 4 Iout2
Semiconductor junction temperature is
within 1
°C of surface temperature
Semiconductor junction temperature is
within 1
°C of surface temperature
Semiconductor junction temperature is
within 1
°C of surface temperature
1.8Vout
3.3Iout
1.8Iout
3.3Vout
1.8Vout
3.3Iout
1.8Iout
3.3Vout
10 H
source
impedance
DC/DC
Converter
Figure 19
Figure 18
Figure 20
1 F
ceramic
capacitors
15 F,
300m
ESR
tantalum
capacitors
100 F,
<1
ESR
electrolytic
capacitor
VSOURCE
i
S
i
C
VOUT2+
VOUT1+
COM
(-)
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