參數(shù)資料
型號(hào)： DPLS350Y-13
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
中文描述： 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, PLASTIC PACKAGE-4
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 181K
代理商： DPLS350Y-13
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
-100
nA
VCB = -50V, IE = 0
Collector-Base Cutoff Current
ICBO
-50
μA
VCB = -50V, IE = 0, TA = 150°C
Emitter-Base Cutoff Current
IEBO
-100
nA
VEB = -5V, IC = 0
Collector-Emitter Cutoff Current
ICES
-100
nA
VCE = -50V, VBE = 0
Collector-Base Breakdown Voltage
V(BR)CBO
-50
V
IC = -100μA
Collector-Emitter Breakdown Voltage
V(BR)CEO
-50
V
IC = -10mA
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
V
IE = -100μA
ON CHARACTERISTICS (Note 4)
200
VCE = -2V, IC = -0.1A
200
VCE = -2V, IC = -0.5A
200
450
VCE = -2V, IC = -1A
130
VCE = -2V, IC = -2A
DC Current Gain
hFE
80
VCE = -2V, IC = -3A
-90
IC = -0.5A, IB = -50mA
-180
IC = -1A, IB = -50mA
-320
IC = -2A, IB = -100mA
-270
IC = -2A, IB = -200mA
Collector-Emitter Saturation Voltage
VCE(SAT)
-390
mV
IC = -3A, IB = -300mA
Equivalent On-Resistance
RCE(SAT)
67
135
m
Ω IE = -2A, IB = -200mA
-1.1
V
IC = -2A, IB = -100mA
Base-Emitter Saturation Voltage
VBE(SAT)
-1.2
V
IC = -3A, IB = -300mA
Base-Emitter Turn-on Voltage
VBE(ON)
-1.1
V
VCE = -2V, IC = -1A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
fT
100
MHz
VCE = -5V, IC = -100mA,
f = 100MHz
Output Capacitance
Cobo
35
pF
VCB = -10V, f = 1MHz
NEW
PROD
UC
T
Notes:
4.
Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
P
,
P
O
WE
R
D
ISSI
P
A
T
IO
N
(
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
A
01
2
3
4
-V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
-I
,
5
C
O
LLE
C
T
O
R
C
U
R
E
N
T
(A
)
C
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage
I = -2mA
B
I = -4mA
B
I = -6mA
B
I = -8mA
B
I = -10mA
B
DS31149 Rev. 4 - 2
2 of 4
www.diodes.com
DPLS350Y
Diodes Incorporated
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