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參數(shù)資料
| 型號： | DP500F |
| 廠商： | AUK Corp |
| 英文描述： | PNP Silicon Transistor (Extremely low collector-to-emitter saturation voltage) |
| 中文描述： | 進步黨硅晶體管（極低的集電極到發(fā)射極飽和電壓） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 47K |
| 代理商： | DP500F |
KST-8014-000
2
DP500F
Absolute maximum ratings
(Ta=25
°
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
-15
V
Collector-Emitter voltage
-12
V
Emitter-Base voltage
- 5
V
Collector current
- 5
A
0.5
Collector dissipation
P
C
T
j
T
stg
*
2
W
Junction temperature
150
°
C
°
C
Storage temperature
-55~ 150
* : When mounted on 40
×
40
×
0.8mm ceramic substate
Electrical Characteristics
(Ta=25
°
C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
= -50
μ
A, I
E
= 0
-15
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
= -1mA, I
B
= 0
I
E
= -50
μ
A, I
C
= 0
-12
-
-
V
Emitter-Base breakdown voltage
BV
EBO
-5
-
-
V
Collector cut-off current
I
CBO
V
CB
= -12V, I
E
= 0
-
-
-1
μ
A
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
= 0
-
-
-1
μ
A
h
FE1
*
V
CE
= -1V, I
C
= -100mA
120
-
700
-
DC current gain
h
FE2
V
CE
= -1V, I
C
= -3A
40
-
-
-
Collector-Emitter on voltage
V
CE(sat1)
I
C
= -3A, I
B
= -150mA
-
-
-0.3
V
Base-Emitter on voltage
V
BE(sat)
I
C
= -3A, I
B
= -150mA
-
-
-1.2
V
Transition frequency
f
T
V
CB
= -5V, I
C
= -500mA
-
150
-
MHz
Collector output capacitance
C
ob
V
CB
= -10V, I
E
= 0, f= 1MHz
-
-
50
pF
* : h
FE
rank / O : 120 ~ 240, Y : 200 ~ 400, G : 350 ~ 700
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