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參數(shù)資料
| 型號(hào)： | DN500 |
| 廠商： | AUK Corp |
| 英文描述： | NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage) |
| 中文描述： | NPN硅晶體管（極低的集電極到發(fā)射極飽和電壓） |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | DN500 |
KST-9086-002
2
DN500
Absolute maximum ratings
(Ta=25
°
C)
Characteristic
Symbol
Ratings
Unit
Collector- Base voltage
V
C BO
V
C E O
V
E BO
15
V
Collector- Emitter voltage
12
V
Emitter- Base voltage
5
V
Collector current
I
C
P
C
T
j
5
A
Collector dissipation
625
mW
°
C
°
C
Junction temperature
150
Storage temperature
T
stg
- 55~ 150
Electrical Characteristics
(Ta=25
°
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Collector-Base breakdown voltage
BV
CBO
I
C
= 50
μ
A, I
E
= 0
15
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
= 1mA, I
B
= 0
I
E
= 50
μ
A, I
C
= 0
12
-
-
V
Emitter-Base breakdown voltage
BV
EBO
5
-
-
V
Collector cut-off current
I
CBO
V
CB
= 15V, I
E
= 0
-
-
0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= 4V, I
C
= 0
-
-
0.1
μ
A
h
FE1
V
CE
=2V, I
C
= 500mA
160
-
320
-
DC current gain
h
FE2
V
CE
= 2V, I
C
= 3A
40
-
-
-
Collector-Emitter on voltage
V
CE(sat1)
I
C
= 3A, I
B
= 150mA
-
-
0.3
V
Base-Emitter on voltage
V
BE(sat)
I
C
= 3A, I
B
= 150mA
-
-
1.2
V
Transition frequency
f
T
V
CB
= 5V, I
C
= 500mA
-
150
-
MHz
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0, f= 1MHz
-
-
50
pF
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