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參數(shù)資料
| 型號： | DN2530N8-G |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Depletion-Mode Vertical DMOS FETs |
| 中文描述： | 200 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 489K |
| 代理商： | DN2530N8-G |
DN2530
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
General Description
The DN2530 is a low threshold depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Ordering Information
BV
DSX
/
BV
DGX
R
(max)
I
(min)
Package Options
TO-243AA
1
DN2530N8
DN2530N8-G
TO-92
DN2530N3
DN2530N3-G
300V
12Ω
200mA
-G indicates package is RoHS compliant (‘Green’)
1
Same as SOT-89. Products shipped on 2000 piece carrier tape reels.
N-Channel Depletion-Mode Vertical DMOS FETs
Pin Configurations
TO-243AA
(top view)
G
D
S
D
D
G
S
TO-92
(front view)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DN2530 | N-Channel Depletion-Mode Vertical DMOS FET(擊穿電壓300V,N溝道耗盡型垂直DMOS場效應(yīng)管) |
| DN2530 | N-Channel Depletion-Mode Vertical DMOS FETs |
| DN2530N3 | N-Channel Depletion-Mode Vertical DMOS FETs |
| DN2530N8 | N-Channel Depletion-Mode Vertical DMOS FETs |
| DN2535N3-G | N-Channel Depletion-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DN2535 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:高速高壓MOSFET,用于開關(guān)信號上,低閥門電壓,0.8V工作. TN系列,VN系列,TP系列,VP系列.TN2540,TN2425,TN0620,TN2640 ,TP2540,TP2522,TP0620,VP0550 高速高壓耗盡型MOSFET, DN2540,DN2535,DN2530, LND150,LND250 高壓驅(qū)動接口IC,N溝道SINK輸出,HV5522(32通道,CCW模式),HV5222(32通道),HV5122(32通道),HV5622(32通道),HV5630(32通道),HV5530 (32通道), 我司專業(yè)代理美國Supertex產(chǎn)品:白光LED照明驅(qū)動IC. LED交通燈, 背光源驅(qū)IC.超聲波醫(yī)療設(shè)備. 議器議表專用IC 及MOSFET管等及CREE(美國獨家專利碳化硅芯片) 高壓肖特基(600V/1200V以上)產(chǎn)品和阿諾(ARNOLD) 鐵硅鋁磁粉環(huán)(芯)，如果沒有特殊說明supertexc產(chǎn)品均為今年以上環(huán)保產(chǎn)品．隨時可以提供樣品．歡迎來電咨詢！ 謝！ www.jarwey.com 13316866350王先生 |
| DN2535_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Depletion-Mode Vertical DMOS FETs |
| DN2535N3 | 功能描述:MOSFET 350V 25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DN2535N3G | 制造商:Supertex Inc 功能描述:Trans MOSFET N-CH 350V 0.12A 3-Pin TO-92 制造商:Supertex 功能描述:Trans MOSFET N-CH 350V 0.12A 3-Pin TO-92 |
| DN2535N3-G | 功能描述:MOSFET 350V 25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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