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參數(shù)資料
| 型號： | DN030U |
| 廠商： | AUK Corp |
| 英文描述： | NPN Silicon Transistor |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 54K |
| 代理商： | DN030U |
KST-3054-000
2
DN030U
Absolute maximum ratings
(Ta=25
°
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
15
V
Collector-Emitter voltage
12
V
Emitter-Base voltage
5
V
Collector current
300
mA
Collector dissipation
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
-55~ 150
Electrical Characteristics
(Ta=25
°
C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
= 50
μ
A, I
E
= 0
15
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
= 1mA, I
B
= 0
12
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
= 50
μ
A, I
C
= 0
5
-
-
V
Collector cut-off current
I
CBO
V
CB
= 12V, I
E
= 0
-
-
0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= 5V, I
C
= 0
-
-
0.1
μ
A
h
FE1
V
CE
= 1V, I
C
= 100mA
200
-
450
-
DC current gain
h
FE2
V
CE
= 1V, I
C
= 300mA
70
-
-
-
V
CE(sat1)
I
C
= 100mA, I
B
= 10mA
-
-
0.2
V
Collector-Emitter saturation voltage
V
CE(sat2)
I
C
= 300mA, I
B
= 30mA
-
-
0.5
V
BE( sat1)
I
C
= 100mA, I
B
= 10mA
-
-
1.2
V
Base-Emitter saturation voltage
V
BE(sat2)
I
C
= 300mA, I
B
= 30mA
-
-
1.7
V
Transition frequency
f
T
V
CE
= 5V, I
C
= 10mA
-
300
-
MHz
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0, f= 1MHz
-
3
-
PF
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|---|---|
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