參數(shù)資料
型號： DMN5L06V
廠商： Diodes Inc.
英文描述： DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述： 雙N溝道增強型場效應(yīng)晶體管
文件頁數(shù)： 3/4頁
文件大?。?/td> 137K
代理商： DMN5L06V
DS30604 Rev. 7 - 2
3 of 4
DMN5L06V/VA
www.diodes.com
N
T , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
0
-50
-25
0
25
50
75
100 125 150
V
G
G
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
-75
V
= 10V
I = 1mA
Pulsed
DS
0.1
I
DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
D
,
1
10
0.001
0.01
0.1
1
V
Pulsed
= 10V
GS
T = 150 C
°
T = -55 C
°
T = 125 C
°
T = -25 C
°
T = 85 C
°
T = 0 C
°
T = 25 C
°
V
GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS,
0
1
2
3
4
5
6
7
8
0
5
10
15
20
T = 25 C
Pulsed
°
I = 140mA
I = 280mA
1
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
10
0.1
1
0.001
0.01
0.1
V
Pulsed
= 5V
GS
T = -55 C
°
T = 150 C
°
T = -25 C
°
T = 25 C
°
T = 0 C
°
T = 125 C
°
T = 85 C
°
I
,
D
0.001
0.01
0.1
0.5
0
1
1
V
,
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
SD
SOURCE-DRAIN VOLTAGE (V)
T
= -55 C
A
°
T = -25 C
°
T = 25 C
°
T
= 85 C
A
°
T
= 125 C
A
°
T
= 150 C
A
°
V
Pulsed
= 0V
GS
T , CHANNEL TEMPERATURE ( C)
Fig. 7
Static Drain-Source On-State Resistance
vs. Channel Temperature
°
0.5
0.9
0.7
1.9
1.7
1.5
1.3
1.1
2.1
2.5
2.3
-50
-25
0
25
50
75
100
125
150
I = 140mA
V
Pulsed
= 10V
GS
I = 280mA
相關(guān)PDF資料
PDF描述
DMN5L06V-7 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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DMN5L06VA-7 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DMN5L06V-7 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DMN5L06VA 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VA-7 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DMN5L06VAK 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VAK-7 功能描述:MOSFET 20V 280mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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