參數(shù)資料
型號(hào)： DMN5L06V-7
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述： 280 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： GREEN, ULTRA SMALL, PLASTIC PACKAGE-6
文件頁數(shù)： 4/4頁
文件大?。?/td> 137K
代理商： DMN5L06V-7
DS30604 Rev. 7 - 2
4 of 4
DMN5L06V/VA
www.diodes.com
Notes: 4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
(Note 6)
KAH = DMN5L06V Product Type Marking Code
(See Note 6)
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
KAH YM
S
1
D
2
G
1
D
1
S
2
G
2
KAG = DMN5L06VA Product Type Marking Code
(See Note 6)
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
KAG YM
S
1
D
2
G
1
D
1
S
2
G
2
Notes: 6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways).
Date Code Key
Year
Code
2005
S
2006
T
2007
U
2008
V
2009
W
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
N
1
I , DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
|
f
0.001
0.01
0.1
0.01
0.1
1
V
Pulsed
= 10V
DS
T =
-55 C
°
T =
-25 C
°
T =
0 C
°
T = 25 C
°
T =
85 C
°
T =
125 C
°
T =
150 C
°
-50
0
50
100
150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 11 Derating Curve - Total
°
P
d
1
0.001
0.01
0.1
1
0
0.5
I
,
D
V
,
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
SD
SOURCE-DRAIN VOLTAGE (V)
T = 25°C
Pulsed
V
= 0V
GS
V
= 10V
GS
Ordering Information
(Note 5)
Device
DMN5L06V-7
DMN5L06VA-7
Packaging
SOT-563
SOT-563
Shipping
3000/Tape & Reel
3000/Tape & Reel
相關(guān)PDF資料
PDF描述
DMN5L06VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VA-7 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06WK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06WK-7 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DMN5L06VA 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VA-7 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DMN5L06VAK 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VAK-7 功能描述:MOSFET 20V 280mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DMN5L06VK 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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