參數(shù)資料
型號： DMN5L06K-7
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述： 300 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： GREEN, PLASTIC PACKAGE -3
文件頁數(shù)： 1/5頁
文件大小： 140K
代理商： DMN5L06K-7
Lead-free Green
DS30929 Rev. 2 - 2
1 of 5
DMN5L06K
www.diodes.com
Diodes Incorporated
DMN5L06K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
50
V
Gate-Source Voltage
V
GSS
±20
V
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
I
D
300
800
mA
Total Power Dissipation (Note 1)
P
d
350
mW
Thermal Resistance, Junction to Ambient
R
JA
357
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Note: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width 10 S, Duty Cycle 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Mechanical Data
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
D
G
S
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
N
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.008 grams (approximate)
Low On-Resistance: R
DS(ON)
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Up To 2kV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
Features
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
ESD protected up to 2kV
SOT-23
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
Max
0.37
0.51
1.20
1.40
2.30
2.50
0.89
1.03
0.45
0.60
1.78
2.05
2.80
3.00
0.013
0.10
0.903
1.10
0.45
0.61
0.085
0.180
0
8
All Dimensions in mm
相關(guān)PDF資料
PDF描述
DMN5L06T N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06T-7 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VAK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VAK-7 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DMN5L06K-7-CUT TAPE 制造商:DIODES 功能描述:DMN5L06K Series N-Channel 50 V 2 Ohm MosFet Surface Mount - SOT-23-3
DMN5L06T 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06T-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DMN5L06TK 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06TK-7 功能描述:MOSFET .15W 50V .28A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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