參數(shù)資料
型號: DMN5L06DMK
廠商: Diodes Inc.
英文描述: DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述: 雙N溝道增強(qiáng)型場效應(yīng)晶體管
文件頁數(shù): 4/5頁
文件大小: 141K
代理商: DMN5L06DMK
DS30927 Rev. 2 - 2
4 of 5
DMN5L06DMK
www.diodes.com
1
0.001
0.01
0.1
1
0
I
,
D
V
,
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
SD
SOURCE-DRAIN VOLTAGE (V)
0.2
0.4
0.6
0.8
V
= 10V
GS
V
= 0V
GS
T = 25°C
Pulsed
1
I , DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
|
f
0.001
0.01
0.1
0.01
0.1
1
V
Pulsed
= 10V
DS
T =
-55 C
°
T =
-25 C
°
T =
150 C
°
T =
125 C
°
T =
85 C
°
T = 25 C
°
-50
0
50
100
150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 11 Derating Curve - Total
°
R
= 556 C/W
0JA
°
P
d
(Note 6)
Ordering Information
Device
Packaging
SOT-26
Shipping
3000/Tape & Reel
DMN5L06DMK-7
Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
N
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DMN5L06DMK_0709 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06DMK-7 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DMN5L06DW 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06DW-7 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DMN5L06DWK 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR