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參數(shù)資料
| 型號： | DMN5L06DMK-7 |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 305 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 141K |
| 代理商： | DMN5L06DMK-7 |
DS30927 Rev. 2 - 2
3 of 5
DMN5L06DMK
www.diodes.com
T , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
0
-55
-25
0
25
50
75
100
125
150
V
G
G
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
= 10V
I = 1mA
Pulsed
DS
0.1
I
DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
D
,
1
10
0.001
0.01
0.1
1
V
Pulsed
= 10V
GS
T = 150 C
°
T = -55 C
°
T = -25 C
°
T = 25 C
°
T = 125 C
°
T = 85 C
°
1
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
10
0.1
1
0.001
0.01
0.1
V
Pulsed
= 5V
GS
T = -55 C
°
T = 150 C
°
T = -25 C
°
T = 25 C
°
T = 125 C
°
T = 85 C
°
V
GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS,
0
0
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2
4
6
8
10
12
14
16
18
T = 25 C
Pulsed
°
I = 140mA
I = 280mA
T , CHANNEL TEMPERATURE ( C)
Fig. 7
Static Drain-Source On-State Resistance
vs. Channel Temperature
°
-50
-25
0
25
50
75
100
125
150
0
1
2
3
V
Pulsed
= 10V
GS
I = 280mA
I = 140mA
I
,
D
0.001
0.01
0.1
0.5
0
1
1
V
,
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
SD
SOURCE-DRAIN VOLTAGE (V)
V
Pulsed
= 0V
GS
T
= -55 C
A
°
T
= 150 C
A
°
T = -25 C
°
T = 25 C
°
T
= 85 C
A
°
T
= 125 C
A
°
N
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PDF描述 |
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| DMN5L06DWK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06DWK-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06DW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06DW-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DMN5L06DW | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06DW-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN5L06DWK | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06DWK_0711 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06DWK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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